1
Ramdani Janal, Droopad Ravindranath, Yu Zhiyi Jimmy: Method for fabricating a semiconductor structure including a metal oxide interface with silicon. Motorola, May 2, 2001: EP1096042-A1 (95 worldwide citation)

A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20; 20') characterised by a silicate material and forming, by ...


2
Ramdani Jamal, Droopad Ravindranath, Yu Zhiyi Jimmy: Method of manufacturing semiconductor structure having metal oxide interface with silicon. Motorola, July 10, 2001: JP2001-189312 (95 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor structure with which a thin stable silicide interface with silicon can be manufactured. SOLUTION: This method of manufacturing semiconductor structure comprises a step of providing a silicon substrate 10 having a surface 12, a ...


3
Yu Zhiyi Jimmi, Demdov Alexander, Wang Jun, Hallmark Jerald Allan, Droopad Ravindranath, Ramdani Jamal: Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon. Motorola, June 20, 2001: EP1109212-A2 (34 worldwide citation)

A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material whic ...


4
Yu Zhiyi, Droopad Ravindranath, Overgaard Corey Daniel, Ramdani Jamal, Curless Jay A, Ooms William Jay, Wang Jun: Method for fabricating a semiconductor structure having a single atomic layer with alkaline earth metal metal, oxygen and silicon at the interface between a silicon substrate and a single crystal oxide layer. Motorola, October 11, 2000: EP1043426-A1 (15 worldwide citation)

A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) characterised by a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers ...


5
Yu Zhiyi, Hallmark Jerald A, Abrokwah Jonathan K, Overgaard Corey Daniel, Droopad Ravindranath: Method of preparing crystalline alkaline earth metal oxides on an si substrate. Motorola, January 30, 2002: EP1176230-A1 (14 worldwide citation)

A method of preparing crystalline alkaline earth metal oxides (15) on a Si substrat (10) wherein a Si substrate with amorphous silicon dioxide (11) on a surface is provided. The substrate is heated to a temperature in a range of 700 DEG C to 800 DEG C and exposed to a beam of alkaline earth metal(s) ...


6
Droopad Ravindranath, Yu Zhiyi, Ramdani Jamal: Method for fabricating a semiconductor structure with reduced leakage current destiny. Motorola, January 17, 2001: EP1069606-A2 (11 worldwide citation)

A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and ...


7
Yu Zhiyi, Wang Jun, Droopad Ravindranath, Demdov Alexander, Hallmark Jerald Allan, Ramdani Jamal: Semiconductor structure having crystalline alkaline earth metal silicon nitride/oxide interface on silicon substrate. Motorola, August 17, 2001: JP2001-223215 (3 worldwide citation)

PROBLEM TO BE SOLVED: To provide a thin and stable crystalline interface on a silicon substrate.SOLUTION: A semiconductor structure consists of a silicon substrate 10, more than one layer of single crystal oxide layers or nitride layers 26 and the interface 14 between the substrate 10 and the more t ...


8
Yu Zhiyi Jimmy, Wang Jun, Droopad Ravindranath, Ramdani Jamal: Method for fabricating a semiconductor structure having a stable crystalline interface with silicon. Motorola, June 20, 2001: EP1108805-A1 (2 worldwide citation)

A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) characterised by a single atomic layer of silicon, nitrogen, and a metal; and forming one or more laye ...


9
Ramdani Jamal, Droopad Ravindranath, Yu Zhiyi Jimmy: Method for fabricating a semiconductor structure including a metal oxide interface with silicon. Motorola, December 11, 2001: TW468212 (2 worldwide citation)

A method of fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12), forming on the surface (12) of the silicon substrate (10), by atomic layer deposition (ALD), a seed layer (20; 20^) comprising a silicate material and forming, by atomic ...


10
Ramdani Jamal, Eisenbeiser Kurt, Droopad Ravindranath, Finder Jeffrey M: Magnetoresistive structure and process for fabricating same. Motorola, September 21, 2002: TW503459 (2 worldwide citation)

Magnetoresistive materials can be grown overlying a semiconductor substrate (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of sili ...