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Eb Eshun
Anil Kumar Chinthakindi, Douglas Duane Coolbaugh, Keith Edward Downes, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel, Anthony Kendall Stamper, Kunal Vaed: Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric. International Business Machines Corporation, H Daniel Schnurmann, Graham S Jones II, April 22, 2008: US07361950 (10 worldwide citation)

A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower ...


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Eb Eshun
Anil Kumar Chinthakindi, Douglas Duane Coolbaugh, Keith Edward Downes, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel, Anthony Kendall Stamper, Kunal Vaed: Method of integration of a MIM capacitor with a lower plate of metal gate material formed on an STI region or a silicide region formed in or on the surface of a doped well with a high K dielectric material. International Business Machines Corporation, H Daniel Schnurmann, Graham S Jones, March 29, 2011: US07915134 (1 worldwide citation)

A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower ...


3
Eb Eshun
Douglas Duane Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel: MIM capacitor and method of making same. International Business Machines Corporation, Schmeiser Olsen & Watts, Yuanmin Cai, March 5, 2013: US08390038

A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, a dielectric block comprising one or more dielectric layers, a lower plate comprising one or more electrically conductive layer; and a spreader plate comp ...


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Eb Eshun
Douglas Duane Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel: MIM capacitor and method of making same. International Business Machines Corporation, Schmeiser Olsen & Watts, Yuanmin Cai, February 10, 2009: US07488643

A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, the upper plate having a top surface, a bottom surface and sidewalls; a spreader plate comprising one or more electrically conductive layers, the spreader ...


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Eb Eshun
Douglas Duane Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel: Mim capacitor and method of making same. Schmeiser Olsen & Watts, September 25, 2008: US20080232025-A1

A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, a dielectric block comprising one or more dielectric layers, a lower plate comprising one or more electrically conductive layer; and a spreader plate comp ...


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Eb Eshun
Douglas Duane Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel: Mim capacitor and method of making same. International Business Machines Corporation, Schmeiser Olsen & Watts, December 27, 2007: US20070296085-A1

A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, the upper plate having a top surface, a bottom surface and sidewalls; a spreader plate comprising one or more electrically conductive layers, the spreader ...


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Arne Watson Ballantine, Douglas Duane Coolbaugh, Jeffrey D Gilbert: Chemically enhanced anneal for removing trench stress resulting in improved bipolar yield. International Business Machines Corporation, William D Sabo, Scully Scott Murphy & Presser, August 7, 2001: US06271100 (75 worldwide citation)

A method of substantially reducing stress in a trench comprising forming at least one trench in a substrate, said substrate having a surface; filling the at least one trench with a trench dielectric material; planarizing the filled trench stopping on said surface of said substrate; and subjecting th ...


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Douglas Duane Coolbaugh, Mark D Dupuis, Matthew D Gallagher, Peter J Geiss, Brett A Philips: STI pull-down to control SiGe facet growth. International Business Machines Corporation, Scully Scott Murphy & Presser, William D Sabo Esq, August 30, 2005: US06936509 (10 worldwide citation)

A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface ...


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Douglas Duane Coolbaugh, Glenn Robert Miller, Sophia Maumovna Ratenberg: Two step anneal for controlling resistor tolerance. International Business Machines Corporation, William D Sabo, Scully Scott Murphy & Presser, July 3, 2001: US06255185 (8 worldwide citation)

A method of controlling the resistance and improving the low temperature tolerance of a polysilicon resistor is provided. The method of the present invention employs a second annealing step after one of the high temperature (about 800° C. or above) device activation anneals. That is, the second anne ...


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Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R Greenberg, David L Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich: Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology. International Business Machines Corporation, William D Sabo, Scully Scott Murphy & Presser, July 30, 2002: US06426265 (7 worldwide citation)

A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of sa ...