1
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Anthony K Stamper, Richard P Volant: Structure and method for self aligned vertical plate capacitor. International Business Machines Corporation, Cantor Colburn, Katherine Brown, March 2, 2010: US07670921 (21 worldwide citation)

A method of forming a metal-insulator-metal (MIM) capacitor includes forming a first planar dielectric layer with a first metallization layer therein; forming a first passivation layer on top thereof; forming a planar conductive layer above the first passivation layer; patterning and selectively rem ...


2
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Richard J Rassel, Robert M Rassel: Tunable temperature coefficient of resistance resistors and method of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony Canale, May 15, 2007: US07217981 (15 worldwide citation)

Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitud ...


3
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Jeffrey P Gambino, Zhong Xiang He, Vidhya Ramachandran: Metal-insulator-metal capacitor and method of fabrication. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, April 5, 2005: US06876028 (15 worldwide citation)

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top s ...


4
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, April 22, 2008: US07361993 (11 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


5
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Jeffrey B Johnson, Jonghae Kim, Jean Oliver Plouchart, Anthony K Stamper: Passive components in the back end of integrated circuits. International Business Machines Corporation, Anthony J Canale, August 3, 2010: US07768055 (10 worldwide citation)

Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical ...


6
Eb Eshun
Anthony K Stamper, Anil K Chinthakindi, Douglas D Coolbaugh, Timothy J Dalton, Daniel C Edelstein, Ebenezer E Eshun, Jeffrey P Gambino, William J Murphy, Kunal Vaed: Air gap under on-chip passive device. International Business Machines Corporation, Lisa U Jaklitsch, Daryl K Neff, February 16, 2010: US07662722 (10 worldwide citation)

A method is provided for fabricating a microelectronic chip which includes a passive device such, as an inductor, overlying an air gap. In such method, a plurality of front-end-of-line (“FEOL”) devices are formed in a semiconductor region of the microelectronic chip, and a plurality of stacked inter ...


7
Eb Eshun
Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Kenneth J Stein, Kunal Vaed, Richard P Volant: Damascene integration scheme for developing metal-insulator-metal capacitors. International Business Machines Corporation, DeLio & Peterson, January 31, 2006: US06992344 (9 worldwide citation)

The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pede ...


8
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Ephrem G Gebreselasie, Zhong Xiang He, Herbert Lei Ho, Deok kee Kim, Chandrasekharan Kothandaraman, Dan Moy, Robert Mark Rassel, John Matthew Safran, Kenneth Jay Stein, Norman Whitelaw Robson, Ping Chuan Wang, Hongwen Yan: Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Yuanmin Cai, April 17, 2012: US08159040 (7 worldwide citation)

A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in ...


9
Eb Eshun
Douglas D Coolbaugh, Hanyi Ding, Ebenezer E Eshun, Michael D Gordon, Zhong Xiang He, Anthony K Stamper: Integrated parallel plate capacitors. International Business Machines Corporation, Anthony J Canale, January 12, 2010: US07645675 (6 worldwide citation)

A parallel plate capacitor formed in the back end of an integrated circuit employs conductive capacitor plates that are formed simultaneously with the other interconnects on that level of the back end (having the same material, thickness, etc). The capacitor plates are set into the interlevel dielec ...


10
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, William J Murphy, Vidhya Ramachandran: Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Anthony J Canale, October 16, 2007: US07282404 (6 worldwide citation)

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by depositi ...