1
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Berk, Daniel P Morris, April 22, 2008: US07361444 (9 worldwide citation)

Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist st ...


2
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, May 4, 2010: US07709177 (5 worldwide citation)

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, June 15, 2010: US07736833

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...


4
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles Latulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. Thomas A Beck, May 29, 2008: US20080124650-A1

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...


5
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. Thomas A Beck, May 29, 2008: US20080124649-A1

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...


6
Qinghuang Lin, Ahmad D Katnani, Douglas Charles LaTulipe Jr, David E Seeger, William Ross Brunsvold, Ali Afzali Ardakani: Radiation sensitive silicon-containing resists. International Business Machines Corporation, Daniel P Morris, Pollock Vande Sande & Amernick, February 13, 2001: US06187505 (20 worldwide citation)

A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid cat ...


7
Qinghuang Lin, Ahmad D Katnani, Douglas Charles LaTulipe Jr, David E Seeger, William Ross Brunsvold, Ali Afzali Ardakani: Radiation sensitive silicon-containing resists. International Business Machines Corporation, Daniel P Morris, Connolly Bove Lodge & Hutz, February 5, 2002: US06344305 (17 worldwide citation)

A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid cat ...