1
Srinivas D Nemani, Li Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana Schmitt, Jia Lee: Method of depositing dielectric films. Applied Materials, Moser Patterson & Sheridan, July 20, 2004: US06764958 (161 worldwide citation)

A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide ...


2
Mehul B Naik, Tim Weidman, Dian Sugiarto, Allen Zhao: Damascene structure fabricated using a layer of silicon-based photoresist material. Applied Materials, Thomason Moser & Patterson, March 20, 2001: US06204168 (43 worldwide citation)

A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low ...


3
Dian Sugiarto, Judy Huang, David Cheung: Process for depositing high deposition rate halogen-doped silicon oxide layer. Applied Materials, Townsend & Townsend & Crew, June 20, 2000: US06077764 (40 worldwide citation)

A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF.sub.4), a gaseous source of oxygen (such as nitrous oxide), and a gaseous source of nit ...


4
Li qun Xia, Tian hoe Lim, Huong Thanh Nguyen, Dian Sugiarto: Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber. Applied Materials, Thomason Moser & Patterson, July 10, 2001: US06258735 (40 worldwide citation)

The present invention provides a method of depositing a carbon doped silicon oxide film having a low dielectric constant (k). The concentration of oxygen is controlled to produce soft plasma conditions inside the chamber while a precursor gas is diverted through a bypass to stabilize the precursor g ...


5
Seon Mee Cho, Peter Wai Man Lee, Chi I Lang, Dian Sugiarto, Chen An Chen, Li Qun Xia, Shankar Venkataraman, Ellie Yieh: CVD plasma assisted lower dielectric constant sicoh film. Applied Materials, Moser Patterson & Sheridan, November 26, 2002: US06486082 (36 worldwide citation)

A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas ...


6
Mehul B Naik, Tim Weidman, Dian Sugiarto, Allen Zhao: Damascene structure fabricated using a layer of silicon-based photoresist material. Applied Materials, Moser Patterson & Sheridan, February 4, 2003: US06514857 (27 worldwide citation)

A damascene structure, and a method of fabricating same, containing relatively low dielectric constant materials (e.g., k less than 3.8). A silicon-based, photosensitive material, such as plasma polymerized methylsilane (PPMS), is used to form both single and dual damascene structures containing low ...


7
Wai Fan Yau, Ju Hyung Lee, Nasreen Gazala Chopra, Tzu Fang Huang, David Cheung, Farhad Moghadam, Kuo Wei Liu, Yung Cheng Lu, Ralf B Willecke, Paul Matthews, Dian Sugiarto: Method of depositing low dielectric constant carbon doped silicon oxide. Applied Materials, Moser Patterson & Sheridan L, October 14, 2003: US06632735 (23 worldwide citation)

A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabr ...


8
Timothy Weidman, Dian Sugiarto: Method and apparatus for depositing deep UV photoresist films. Applied Materials, Townsend & Townsend & Crew, March 23, 1999: US05885751 (22 worldwide citation)

An improved method and apparatus for forming a plasma-polymerized methylsilane (PPMS) photo-sensitive resist material includes the steps of pressurizing the chamber to between about 1 to about 2 Torr, heating the substrate to between about 50.degree. C. and about 200.degree. C., and plasma-polymeriz ...


9
Dian Sugiarto, Judy Huang, David Cheung: Apparatus for depositing high deposition rate halogen-doped silicon oxide layer. Applied Materials, Townsend & Townsend & Crew, May 28, 2002: US06395092 (17 worldwide citation)

A silicon oxide film is deposited on a substrate by first introducing a process gas into a chamber. The process gas includes a gaseous source of silicon (such as silane), a gaseous source of fluorine (such as SiF


10
Kang Sub Yim, Melissa M Tam, Dian Sugiarto, Chi I Lang, Peter Wai Man Lee, Li Qun Xia: Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide. Applied Materials, Moser Patterson & Sheridan, January 4, 2005: US06838393 (9 worldwide citation)

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also prov ...