1
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Ephrem G Gebreselasie, Zhong Xiang He, Herbert Lei Ho, Deok kee Kim, Chandrasekharan Kothandaraman, Dan Moy, Robert Mark Rassel, John Matthew Safran, Kenneth Jay Stein, Norman Whitelaw Robson, Ping Chuan Wang, Hongwen Yan: Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Yuanmin Cai, April 17, 2012: US08159040 (5 worldwide citation)

A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in ...


2
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer Jr, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitman Curtis Christofferson & Cook PC, Joseph P Abate, March 3, 2009: US07497959 (4 worldwide citation)

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


3
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Thimothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. Whitham Curtis & Christofferson PC, October 23, 2008: US20080261128-A1

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


4
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitham Curtis & Christofferson PC, November 17, 2005: US20050255386-A1

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


5
Bruce G Elmegreen, Subramanian S Iyer, Deok kee Kim, Lia Krusin Elbaum, Dennis M Newns, Byeongju Park: Programmable fuse/non-volatile memory structures using externally heated phase change material. International Business Machines Corporation, Cantor Colburn, Ido Tuchman, August 12, 2008: US07411818 (29 worldwide citation)

A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to re ...


6
Deok kee Kim, Hoki Kim, Chandrasekharan Kothandaraman, Byeongju Park, John M Safran: Electrical antifuse with integrated sensor. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Joseph P Abate Esq, May 11, 2010: US07714326 (21 worldwide citation)

The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and then by inducing electromigration of the conducting material into the antifuse link, the resistance of t ...


7
Herbert L Ho, John E Barth Jr, Ramachandra Divakaruni, Wayne F Ellis, Johnathan E Faltermeier, Brent A Anderson, Subramanian S Iyer, Deok Kee Kim, Randy W Mann, Paul C Parries: Low-cost deep trench decoupling capacitor device and process of manufacture. International Business Machines Corporation, Scully Scott Murphy & Presser P C, H Daniel Schnurmann, March 20, 2007: US07193262 (16 worldwide citation)

A novel trench-type decoupling capacitor structure and low-cost manufacturing process to create trench decoupling capacitors (decaps). In a unique aspect, the invention necessitates the addition of only a simplified trench to a base logic design.


8
Oh Jung Kwon, Kangguo Cheng, Deok kee Kim, Carl J Radens: Method for forming a self-aligned contact with a silicide or damascene conductor and the structure formed thereby. International Business Machines Corporation, Graham S Jones II, H Daniel Schnurmann, April 26, 2005: US06884715 (14 worldwide citation)

A method of forming a device including a conductor and a contact over a semiconductor substrate starts by depositing first dielectric and first hard mask layers on the substrate. Form a conductor slot through the hard mask and down into or through the first dielectric layer. Form a recessed conducto ...


9
Young Ho Yim, Baek Geun Ahn, Deok Kee Kim: Product selling system and method for operating the same. LG Electronics, Ked & Associates, April 1, 2008: US07353188 (13 worldwide citation)

A product selling system is provided which allows clients with networks accessible to the Internet to contact a service provider network for purchases. The service provider network includes a database with three dimensional (3D) image data for a variety of its products, and an application which allo ...


10
Kuang Neng Chen, Bruce G Elmegreen, Deok Kee Kim, Chandrasekharan Kothandaraman, Lia Krusin Elbaum, Chung H Lam, Dennis M Newns, Byeongju Park, Sampath Purushothaman: Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material. International Business Machines Corporation, Cantor Colburn, Vazken Alexanian, December 15, 2009: US07633079 (12 worldwide citation)

A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical conta ...



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