1
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Beyer Weaver & Thomas, December 12, 2006: US07148155 (255 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


2
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Weaver Austin Villeneuve & Sampson, September 7, 2010: US07790633 (102 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


3
Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W Mountsier, Bart J van Schravendijk, Easwar Srinivasan, Mandyam Sriram: Plasma activated conformal film deposition. Novellus Systems, Weaver Austin Villeneuve & Sampson, May 20, 2014: US08728956 (59 worldwide citation)

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant ...


4
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition. Novellus Systems, Beyer Weaver, November 20, 2007: US07297608 (56 worldwide citation)

A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. Th ...


5
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkins, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie, Wai Fan Yau, Brian G Lu, Timothy M Archer, Sasson Roger Somekh: Conformal nanolaminate dielectric deposition and etch bag gap fill process. Novellus Systems, Weaver Austin Villeneuve & Sampson, January 27, 2009: US07482247 (52 worldwide citation)

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of ...


6
Shankar Swaminathan, Jon Henri, Dennis M Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K Kattige, Bart J van Schravendijk, Andrew J McKerrow: Plasma activated conformal dielectric film deposition. Novellus Systems, Weaver Austin Villeneuve & Sampson, January 28, 2014: US08637411 (47 worldwide citation)

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorpt ...


7
Dennis M Hausmann, Adrianne K Tipton, Patrick A Van Cleemput, Bunsen Nie, Francisco J Juarez, Teresa Pong: Properties of a silica thin film produced by a rapid vapor deposition (RVD) process. Novellus Systems, Beyer Weaver & Thomas, March 15, 2005: US06867152 (40 worldwide citation)

A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectr ...


8
Shankar Swaminathan, Jon Henri, Dennis M Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K Kattige, Bart K van Schravendijk, Andrew J McKerrow: Plasma activated conformal dielectric film deposition. Novellus Systems, Weaver Austin Villeneuve & Sampson, April 7, 2015: US08999859 (33 worldwide citation)

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorpt ...


9
Dennis M Hausmann, Jeff Tobin, George D Papasouliotis, Ron Rulkens, Raihan M Tarafdar, Adrianne K Tipton, Bunsen Nie: Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer. Novellus Systems, Beyer Weaver, April 10, 2007: US07202185 (28 worldwide citation)

An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes ...


10
Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W Mountsier, Bart J van Schravendijk, Easwar Srinivasan, Mandyam Sriram: Plasma activated conformal film deposition. Novellus Systems, Weaver Austin Villeneuve & Sampson, January 5, 2016: US09230800 (23 worldwide citation)

Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant ...