1
Yu Zhiyi Jimmi, Demdov Alexander, Wang Jun, Hallmark Jerald Allan, Droopad Ravindranath, Ramdani Jamal: Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon. Motorola, June 20, 2001: EP1109212-A2 (34 worldwide citation)

A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material whic ...


2
Yu Zhiyi, Wang Jun, Droopad Ravindranath, Demdov Alexander, Hallmark Jerald Allan, Ramdani Jamal: Semiconductor structure having crystalline alkaline earth metal silicon nitride/oxide interface on silicon substrate. Motorola, August 17, 2001: JP2001-223215 (3 worldwide citation)

PROBLEM TO BE SOLVED: To provide a thin and stable crystalline interface on a silicon substrate.SOLUTION: A semiconductor structure consists of a silicon substrate 10, more than one layer of single crystal oxide layers or nitride layers 26 and the interface 14 between the substrate 10 and the more t ...


3
Demdov Alexander, Droopad Ravindranath, Hallmark Jerald Allan, Wang Jun, Yu Zhiyi Jimmy: Semiconductor structure having crystalline alkaline earth metal silicon nitride/oxide interface on silicon. Motorola, July 7, 2001: KR1020000073298

PURPOSE: Semiconductor structure is provided for a thin and stable crystalline interface on a silicon substrate. CONSTITUTION: At least one layer of single crystal oxide layers or nitride layers(26) and the interface(14) between the substrate(10) and the at least one layer of the single crystal oxid ...