1
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods of making power semiconductor devices with thick bottom oxide layer. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, March 27, 2012: US08143124 (110 worldwide citation)

A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a char ...


2
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods related to power semiconductor devices with thick bottom oxide layers. Fairchild Semiconductor Corporation, January 20, 2015: US08936985

A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second ...


3
Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Chongman Yun, J G Lee, Peter H Wilson, Joseph A Yedinak, J Y Jung, H C Jang, Babak S Sani, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Trenched Shield Gate Power Semiconductor Devices and Methods of Manufacture. Townsend And Townsend And Crew, June 26, 2008: US20080150020-A1

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trenc ...


4
Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Chongman Yun, JG Lee, Peter H Wilson, Joseph A Yedinak, JY Jung, HC Jang, Babak S Sani, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Power semiconductor devices and methods of manufacture. Fairchild Semiconductor, Townsend And Townsend And Crew, August 4, 2005: US20050167742-A1

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other tech ...


5
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods of Making Power Semiconductor Devices with Thick Bottom Oxide Layer. Townsend And Townsend And Crew, June 12, 2008: US20080138953-A1

A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film that fills the trench and covers a top surface of the substrate. and etching the oxide film off the top surface of the substrate and inside the trench to leave a sub ...


6
Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridlay, Steven P Sapp, Qi Wang, Chongman Yun, JG Lee, Peter H Wilson, Joseph A Yedinak, JY Jung, HC Jang, Babak S Sanl, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Power Semiconductor Devices Having Termination Structures and Methods of Manufacture. Townsend And Townsend And Crew, June 12, 2008: US20080135931-A1

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions h ...


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Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Chongman Yun, JG Lee, Peter H Wilson, Joseph A Yedinak, JY Jung, HC Jang, Babak S Sani, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Power semiconductor devices and methods of manufacture. Townsend And Townsend And Crew, September 28, 2006: US20060214221-A1

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other tech ...


8
Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Chongman Yun, J G Lee, Peter H Wilson, Joseph A Yedinak, J Y Jung, H C Jang, Babak S Sani, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Power semiconductor devices and methods of manufacture. Townsend And Townsend And Crew, September 28, 2006: US20060214222-A1

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other tech ...


9
Debra S Woolsey, Tony L Olsen, Gordon K Madson: Methods for making semiconductor devices using nitride consumption locos oxidation. Kenneth E Horton, Kirton & Mcconkle, July 29, 2010: US20100187602-A1

Semiconductor devices and methods for making such devices using nitride consumption LOCOS oxidation are described. The semiconductor devices contain a planar field oxide structure that has been grown using a nitride layer as an oxidation mask. Once the field oxide structure has been grown, the nitri ...


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Ashok Challa, Alan Elbanhawy, Thomas E Grebs, Nathan L Kraft, Dean E Probst, Rodney S Ridley, Steven P Sapp, Qi Wang, Chongman Yun, JG Lee, Peter H Wilson, Joseph A Yedinak, JY Jung, HC Jang, Babak S Sani, Richard Stokes, Gary M Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher L Rexer, Christopher B Kocon, Debra S Woolsey: Methods of making power semiconductor devices with thick bottom oxide layer. August 30, 2012: US20120220091-A1

A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film by a sub-atmospheric chemical vapor deposition process that fills the trench and covers a top surface of the substrate. The method also includes etching the oxide fi ...