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Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods of making power semiconductor devices with thick bottom oxide layer. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, March 27, 2012: US08143124 (110 worldwide citation)

A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a char ...


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Hamza Yilmaz, Daniel Calafut, Christopher Boguslaw Kocon, Steven P Sapp, Dean E Probst, Nathan L Kraft, Thomas E Grebs, Rodney S Ridley, Gary M Dolny, Bruce D Marchant, Joseph A Yedinak: Trench-gate field effect transistors and methods of forming the same. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 17, 2009: US07504303 (52 worldwide citation)

A method for forming a shielded gate field effect transistor includes the following steps. Trenches extending into a silicon region are formed using a mask that includes a protective layer. A shield dielectric layer lining sidewalls and bottom of each trench is formed. A shield electrode is formed i ...


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Nathan L Kraft, Ashok Challa, Steven P Sapp, Hamza Yilmaz, Daniel Calafut, Dean E Probst, Rodney S Ridley, Thomas E Grebs, Christopher B Kocon, Joseph A Yedinak, Gary M Dolny: Trench FET with improved body to gate alignment. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, August 26, 2008: US07416948 (21 worldwide citation)

A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. Each trench is partially filled with one or more materials. A dual-pass angled implant is carried out to implant dopants of a second conductivity type into the semiconductor re ...


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Brian S Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean E Probst: Field effect transistor and method of its manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 31, 2009: US07511339 (16 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


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Brian Sze Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean E Probst: Method of manufacturing a trench transistor having a heavy body region. Fairchild Semiconductor Corporation, Babak S Sani, Townsend and Townsend and Crew, December 12, 2006: US07148111 (16 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


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Thomas E Grebs, Mark Rinehimer, Joseph Yedinak, Dean E Probst, Gary Dolny, John Benjamin: Trench-shielded semiconductor device. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, April 3, 2012: US08148749 (5 worldwide citation)

Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having a surface, a first area of the semiconductor region, a well region of a first conductivity type disposed ...


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