1
David W Burns, Henry Guckel, James D Zook: Opto-electro-mechanical device or filter, process for making, and sensors made therefrom. Honeywell, Ian D Mackinnon, September 24, 1996: US05559358 (371 worldwide citation)

The present invention relates to microstructures fabricated from semiconductor material and having a flexible member which is excited into various modes of resonance and in which such resonance is read optically. By coupling the microstructure to a surface or material of interest, a drive means will ...


2
Henry Guckel, David W Burns: Polysilicon thin film process. Wisconsin Alumni Research Foundation, Lathrop & Clark, January 30, 1990: US04897360 (131 worldwide citation)

Polycrystalline silicon is deposited in a film onto the surface of a substrate which has been carefully prepared to eliminate any defects or contaminants which could nucleate crystal growth on the substrate. The deposition is carried out by low pressure decomposition of silane at substantially 580.d ...


3
Henry Guckel, David W Burns: Sealed cavity semiconductor pressure transducers and method of producing the same. Wisconsin Alumni Research Foundation, Isaksen Lathrop Esch Hart & Clark, May 17, 1988: US04744863 (104 worldwide citation)

Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27 ...


4
Janusz Bryzek, David W Burns, Steven S Nasiri, Sean S Cahill: Compensated semiconductor pressure sensor. Maxim Integrated Products, Blakely Sokoloff Taylor & Zafman, May 8, 2001: US06229190 (84 worldwide citation)

A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorpo ...


5
Henry Guckel, David W Burns: Sealed cavity semiconductor pressure transducers and method of producing the same. Wisconsin Alumni Research Foundation, Lathrop & Clark, August 1, 1989: US04853669 (76 worldwide citation)

Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27 ...


6
Steven S Nasiri, David W Burns, Janusz Bryzek, Sean S Cahill: Hermetic packaging for semiconductor pressure sensors. Maxim Integrated Products, Blakely Sokoloff Taylor & Zafman, March 5, 2002: US06351996 (76 worldwide citation)

A hermetic media interface for a sensor package is disclosed. Preferably, the hermetic media interface is incorporated into a pressure sensor package for interfacing directly to fluid and/or gaseous media. In one embodiment, the pressure sensor package includes a semiconductor die and a pressure por ...


7
Henry Guckel, David W Burns: Sealed cavity semiconductor pressure transducers and method of producing the same. Wisconsin Alumni Research Foundation, Foley & Lardner, February 26, 1991: US04996082 (64 worldwide citation)

Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27 ...


8
David W Burns, Max C Glenn: Piezoresistive silicon pressure sensor implementing long diaphragms with large aspect ratios. Honeywell, Paul H McDowall, Michael B Atlass, January 23, 1996: US05485753 (63 worldwide citation)

A form of pressure sensor diaphragm and method of making that allows for the formation of long rectangular plate structures in semiconducting material, especially Silicon. A plurality or multiplicity of sensors may be constructed on a single chip, thus providing for absolute and relative sensing of ...


9
William R Herb, David W Burns, Daniel W Youngner: Zero TCF thin film resonator. Honeywell International, May 6, 2003: US06557419 (53 worldwide citation)

A multi-material resonant thin film beam for a micromechanical sensor having a zero temperature coefficient of frequency (TCF) which is the resonant frequency shift with temperature change. One of the materials may be polysilicon and the other material may be silicon nitride or silicon oxide. Each m ...


10
James D Zook, David W Burns: Resonant gauge with microbeam driven in constant electric field. Honeywell, January 4, 1994: US05275055 (46 worldwide citation)

A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam attached at both ends to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lowe ...



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