1
Yanjun Ma, Douglas James Tweet, David Russell Evans: Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, Scott C Krieger, September 16, 2003: US06620664 (44 worldwide citation)

An integrated circuit metal oxide semiconductor device comprises a gate region and a dielectric layer positioned therein, wherein the dielectric layer is substantially free of germanium diffused therein from a silicon germanium layer of the device. The method comprises depositing a dummy replacement ...


2
Sheng Teng Hsu, Douglas James Tweet, Wei Pan, David Russell Evans: Method of forming amorphous conducting diffusion barriers. Sharp Laboratories of America, Mathew D Rabdau, David C Ripma, Scott C Krieger, February 27, 2001: US06194310 (39 worldwide citation)

A method of forming conducting diffusion barriers is provided. The method produces substantially amorphous conducting diffusion barriers by depositing materials with varying ratios of elements throughout the diffusion barrier. Diffusion barriers of metal nitride, metal silicon nitride, are deposited ...


3
Hongning Yang, David Russell Evans, Sheng Teng Hsu: Method of making low-K carbon doped silicon oxide. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, June 25, 2002: US06410462 (34 worldwide citation)

A method of producing a low-k interconnect dielectric material, using PECVD processes and readily available precursors to produce carbon-doped silicon oxide (SiOC). SiOC dielectric materials are produced using conventional silane based gas precursors, of silane and nitrous oxide, along with hydrocar ...


4
Tue Nguyen, Bruce Dale Ulrich, David Russell Evans: Multi-level reticle system and method for forming multi-level resist profiles. Sharp Laboratories of America, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, August 10, 1999: US05936707 (30 worldwide citation)

A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an interm ...


5
Tue Nguyen, Bruce Dale Ulrich, David Russell Evans: Multi-level photoresist profile method. Sharp Kabushiki Kaisha, Sharp Microelectronics Technology, Gerald Maliszewski, David C Ripma, May 25, 1999: US05906910 (21 worldwide citation)

A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an interm ...


6
Shien Ten Suu, Li Tingkai, David Russell Evans, Zhuang Wei Wei, Pan Wei: Asymmetric crystalline structure memory cell. Sharp, December 9, 2004: JP2004-349689 (16 worldwide citation)

PROBLEM TO BE SOLVED: To provide a memory cell having an asymmetrical crystal structure, and to provide a method of manufacturing the memory cell.SOLUTION: The method of manufacturing the memory cell having an asymmetrical crystal structure includes a step of forming a lower electrode, a step of for ...


7
Tue Nguyen, Bruce Dale Ulrich, David Russell Evans: Method for forming a multi-level reticle. Sharp Microeletronics Technology, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, June 22, 1999: US05914202 (14 worldwide citation)

A method is providing for making a multi-level reticle which transmits a plurality of incident light intensities, which in turn, are used to form a plurality of thicknesses in a photoresist profile. A partially transmitting film, used as one of the layers of the reticle, is able to provide an interm ...


8
Yanjun Ma, Douglas James Tweet, David Russell Evans: Integrated circuit metal oxide semiconductor transistor. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, July 6, 2004: US06759695 (11 worldwide citation)

An integrated circuit metal oxide semiconductor device comprises a gate region and a dielectric layer positioned therein, wherein the dielectric layer is substantially free of germanium diffused therein from a silicon germanium layer of the device. The method comprises depositing a dummy replacement ...


9
Wei Wei Zhuang, Tue Nguyen, Robert Barrowcliff, David Russell Evans, Sheng Teng Hsu: Alkene ligand precursor and synthesis method. Sharp Laboratories of America, David C Ripma, Matthew Rabdau, July 18, 2000: US06090963 (10 worldwide citation)

A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consis ...


10
Wei Wei Zhuang, Tue Nguyen, Lawrence J Charneski, David Russell Evans, Sheng Teng Hsu: Substituted ethylene precursor and synthesis method. Sharp Laboratories of America, Gerald Maliszewski, David C Ripma, November 30, 1999: US05994571 (8 worldwide citation)

A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ...