1
Katherina Babich
Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu Song Huang, Arpan P Mahorowala, David R Medeiros, Ratnam Sooriyakumaran: Antireflective SiO-containing compositions for hardmask layer. International Business Machines Corporation, Steven Capella, May 4, 2004: US06730454 (48 worldwide citation)

Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity prope ...


2
Katherina Babich
Marie Angelopoulos, Katherina E Babich, David R Medeiros, Wayne M Moreau: Multifunctional polymeric materials and use thereof. International Business Machines Corporation, Daniel P Morris, Connolly Bove Lodge & Hutz, February 3, 2004: US06686124 (23 worldwide citation)

A multifunctional polymer comprising a polymeric chain having chromophore groups and cross-linking sites is suitable as a resist material and especially as the underlayer for bilayer and top surface imaging strategies. The multifunctional polymer can function as an antireflective coating, planarizin ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Berk, Daniel P Morris, April 22, 2008: US07361444 (9 worldwide citation)

Disclosed are multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist st ...


4
Katherina Babich
Katherina Babich, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, May 29, 2007: US07223517 (7 worldwide citation)

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


5
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, May 4, 2010: US07709177 (5 worldwide citation)

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...


6
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, January 19, 2010: US07648820 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


7
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, February 6, 2007: US07172849 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


8
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R Medeiros, Wayne Martin Moreau, Karen E Petrillo, John P Simons: Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof. International Business Machines Corporation, Thomas A Beck, Daniel P Morris, June 15, 2010: US07736833

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibi ...


9
Katherina Babich
Katherina E Babich, Bruce B Doris, David R Medeiros, Devendra K Sadana: Method for tuning epitaxial growth by interfacial doping and structure including same. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Louis J Percello Esq, September 7, 2010: US07790593

A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of ...


10
Katherina Babich
Katherina E Babich, Bruce B Doris, David R Medeiros, Devendra K Sadana: Method for tuning epitaxial growth by interfacial doping and structure including same. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Robert M Trepp Esq, February 12, 2008: US07329596

A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of ...



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