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James R Todd, David R Cotton, Taylor R Efland, John K Lee, Roy C Jones III: Integrated power DMOS circuit with protection diode. Texas Instruments Incorporated, Gary C Honeycutt, Richard Donaldson, William E Hiller, June 2, 1992: US05119162 (28 worldwide citation)

Methods and circuits of integrated DMOS, CMOS, NPN, and PNP devices include self-aligned DMOS (411) with increased breakdown voltage and ruggedness for recovery from transients including additional Zener diodes (402/474).


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Dan M Mosher, Cornelia H Blanton, Joe R Trogolo, Larry Latham, David R Cotton, Bob Todd: Method of forming complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate. Texas Instruments Incorporated, B Peter Barndt, Richard L Donaldson, October 26, 1993: US05256582 (20 worldwide citation)

The present invention relates to a method of manufacturing a semiconductor integrated device and, more particularly, to a semiconductor integrated device having NPN and PNP power and logic devices combined with complementary MOS and DMOS devices. The present invention is a multipitaxial process for ...


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Dan M Mosher, Larry Latham, Bob Todd, Cornelia H Blanton, Joe R Trogolo, David R Cotton: Complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate. Texas Instruments Incorporated, B Peter Barndt, Richard L Donaldson, January 19, 1993: US05181095 (11 worldwide citation)

An integrated circuit device of a first N-type epitaxial layer over a substrate, a second P-type epitaxial layer over the first epitaxial layer, and a third N-type epitaxial layer over the second epitaxial layer, with a P-type buried ground region formed in a portion of the substrate, the ground reg ...


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Vijay K Pathak, David R Cotton: Triac array. Texas Instruments Incorporated, William E Hiller, N Rhys Merrett, Mel Sharp, July 30, 1991: US05036377 (7 worldwide citation)

Thyristors of one conductivity type formed as an array in a first semiconductor body are respectively connected in parallel with thyristors of the opposite conductivity type formed as an array in a second semiconductor body to produce an array of triacs. In each body the thyristors are separate exce ...


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Dan M Mosher, Cornelia H Blanton, Joe R Trogolo, Larry Latham, David R Cotton: Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same. Texas Instruments Incorporated, B Peter Barndt, Richard L Donaldson, October 6, 1992: US05153697 (7 worldwide citation)

An integrated circuit is formed on an N-type semiconductor wafer having a first N-type epitaxial layer on the substrate, a P-type epitaxial layer over the first N-type epitaxial layer, and a second N-type epitaxial layer over the P-type epitaxial layer. There are also a plurality of sets of P-type i ...


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Andrew Marshall, Kenneth G Buss, David R Cotton: Method and apparatus for thermally separating devices on a power integrated circuit. Texas Instruments Incorporated, Stanton C Braden, Richard L Donaldson, November 30, 1993: US05267118 (6 worldwide citation)

Circuitry (46, or 28 and 70) for thermally separating a power integrated circuit device (12) from a plurality of other such devices (14, 16, and 18) on a common power integrated circuit chip (10) operate when the device (12) reaches a thermal shutdown temperature setpoint (56) with an output current ...


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David R Cotton: Power bipolar transistor. Texas Instruments Incorporated, Gary C Honeycutt, Melvin Sharp, Rhys Merrett, September 6, 1988: US04769688 (4 worldwide citation)

A bipolar power transistor having a plurality of elongated emitter parts connected to a common emitter metallization is provided with a shaped resistive region between the emitter parts and the emitter metallization, in order to compensate for differences in the resistance presented by the metalliza ...


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Derek Colman, David R Cotton: Darlington transistors. Texas Instruments Incorporated, Mel Sharp, N Rhys Merrett, Gary C Honeycutt, August 5, 1986: US04604640 (1 worldwide citation)

In a darlington transistor having an integrated resistor connected from base to emitter of the output transistor element, the effect of the diode between collector and emitter formed when the resistor consists of an extension to the base region is reduced by forming at least part of the resistor eit ...