1
Dan Maydan, Sasson Somekh, David N Wang, David Cheng, Masato Toshima, Isaac Harari, Peter D Hoppe: Multi-chamber integrated process system. Applied Materials, Philip A Dalton, August 28, 1990: US04951601 (723 worldwide citation)

An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuu ...


2
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Robert J Stern, Philip A Dalton, March 19, 1991: US05000113 (566 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


3
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: CVD of silicon oxide using TEOS decomposition and in-situ planarization process. Applied Materials, Schlemmer Dalton Associates, October 10, 1989: US04872947 (351 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


4
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Process for PECVD of silicon oxide using TEOS decomposition. Applied Materials, Philip A Dalton, January 9, 1990: US04892753 (292 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


5
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Plasma-enhanced CVD process using TEOS for depositing silicon oxide. Applied Materials, Philip A Dalton, Robert J Stern, November 8, 1994: US05362526 (254 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


6
David Cheng, Dan Maydan, Sasson Somekh, Kenneth R Stalder, Dana L Andrews, Mei Chang, John M White, Jerry Y K Wong, Vladimir J Zeitlin, David N Wang: Magnetic field-enhanced plasma etch reactor. Applied Materials, Flehr Hohbach Test Albritton & Herbert, June 27, 1989: US04842683 (216 worldwide citation)

A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and ...


7
Mei Chang, Cissy Leung, David N Wang, David Cheng: Process for CVD deposition of tungsten layer on semiconductor wafer. Applied Materials, John P Taylor, July 2, 1991: US05028565 (206 worldwide citation)

An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer o ...


8
Dan Maydan, Sasson Somekh, David N Wang, David Cheng, Masato Toshima, Isaac Harari, Peter D Hoppe: Multichamber integrated process system. Applied Materials, Birgit E Morris, March 8, 1994: US05292393 (199 worldwide citation)

An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuu ...


9
Robert Foster, David N Wang, Sasson Somekh, Dan Maydan: Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition. Applied Materials, Flehr Hohbach Test Albritton & Herbert, May 26, 1987: US04668365 (133 worldwide citation)

A plasma CVD reactor and associated process use magnetic field enhancement to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films. The reacter and process are designed for automated, high-throughout, in-line small dimension VLSI integrated circuit fabr ...


10
David Cheng, Dan Maydan, Sasson Somekh, Kenneth R Stalder, Dana L Andrews, Mei Chang, John M White, Jerry Y K Wong, Vladimir J Zeitlin, David N Wang: Magnetic field-enhanced plasma etch reactor. Applied Materials, Birgit E Morris, June 1, 1993: US05215619 (93 worldwide citation)

A magnetic field enhanced single wafer plasma etch reactor is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (walls and ...