1
Eric G Stevens, David L Losee, Edward T Nelson, Timothy J Tredwell: Non-interlaced interline transfer CCD image sensing device with simplified electrode structure for each pixel. Eastman Kodak Company, Raymond L Owens, August 10, 1993: US05235198 (131 worldwide citation)

An interline transfer type area image sensor which operates in a non-interlaced mode and has an array of columns and rows of photoreceptor in which charge from each pixel is transferred into a stage of a vertical two-phase CCD shift register formed by adjacent electrodes of the CCD. Each electrode o ...


2
David L Losee, James P Lavine: Method of making edge-aligned implants and electrodes therefor. Eastman Kodak Company, Dana M Schmidt, September 23, 1986: US04613402 (57 worldwide citation)

There is disclosed a process particularly suited for making CCD's. The process comprises the steps of


3
David L Losee, Bruce C Burkey, Teh Hsuang Lee: Selective operation in interlaced and non-interlaced modes of interline transfer CCD image sensing device. Eastman Kodak Company, Raymond L Owens, September 24, 1991: US05051832 (26 worldwide citation)

An interline transfer type area image sensor is described which can selectively operate in either an interlaced or non-interlaced read-out mode. The sensor includes a plurality of vertical CCD shift registers. Each shift register has an ion implanted shift transfer barrier or storage regions such th ...


4
Luther C Roberts, David L Losee: Method of making color filter arrays by transferring two or more colorants simultaneously. Eastman Kodak Company, James D Leimbach, May 5, 1998: US05747199 (22 worldwide citation)

A method of making a color filter array on a first substrate having an array of pixels, comprising the steps of: depositing and patterning a photoresist layer on the substrate layer to form selected openings over pixels in the array; providing a plurality of two or more transferable colorant layers ...


5
David L Losee, Timothy J Tredwell, David M Boisvert: Interline transfer CCD image sensing device with electrode structure for each pixel. Eastman Kodak Company, Raymond L Owens, March 13, 1990: US04908518 (22 worldwide citation)

In interline transfer type are image sensor wherein photogenerated charge is transferred from a pixel into a charge coupled dvice (CCD) or shift register. The CCD structure is typically composed of two or more overlapping levels of polysilicon electrodes associated with each row of pixels. In accord ...


6
David L Losee, Madhav Mehra: Image sensing device with reduced smear. Eastman Kodak Company, Raymond L Owens, January 28, 1992: US05084749 (22 worldwide citation)

In interline transfer type image sensing devices, image smear is produced when light is allowed to penetrate into the charge transfer regions of the device. In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates WSi.sub.x (wherein ...


7
David L Losee, Christopher Parks: Method for reducing dark current. Eastman Kodak Company, Peyton C Watkins, February 7, 2006: US06995795 (18 worldwide citation)

A method for reducing dark current within an image sensor includes applying, at a first time period, a first set of voltages to the phases of gate electrodes of vertical shift registers sufficient to accumulate holes of the vertical shift register, beneath each gate electrode and applying, at a seco ...


8
Gilbert A Hawkins, David L Losee, Robert L Nielsen: Process for preparing a charge coupled device with charge transfer direction biasing implants. Eastman Kodak Company, Carl O Thomas, May 24, 1988: US04746622 (18 worldwide citation)

A process is disclosed of preparing a charge coupled device containing charge transfer direction biasing implants wherein the steps and materials for patterning electrodes and implants promote accurate edge alignments of implants and electrodes while minimizing strains and avoiding temperatures that ...


9
Eric G Stevens, Stephen L Kosman, David L Losee, James P Lavine: Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors. Eastman Kodak Company, Peyton C Watkins, October 23, 2001: US06306676 (15 worldwide citation)

A method and apparatus of making high energy implanted photodiode that is self aligned with the transfer gate, the high energy implant is defined by providing a substrate, or well, of a first conductivity type, defining a charge coupled device within the substrate, or well, such that gate electrode ...


10
David N Nichols, David L Losee, Christopher Parks: Lightshield architecture for interline transfer image sensors. Eastman Kodak Company, Peyton C Watkins, September 5, 2006: US07102185 (14 worldwide citation)

An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping ...