1
David J Coe: High voltage semiconductor device. U S Philips, Paul R Miller, June 28, 1988: US04754310 (268 worldwide citation)

A field effect transistor, a bipolar transistor, a PIN diode, a Schottky rectifier or other high voltage semiconductor device comprise a semiconductor body having a depletion layer formed throughout a portion in at least a high voltage mode of operation of the device, such as, by reverse biasing a r ...


2
Ari Glezer, Mark G Allen, David J Coe, Barton L Smith, Mark A Trautman, John W Wiltse: Synthetic jet actuator and applications thereof. Georgia Tech Research Corporation, Thomas Kayden Horstemeyer & Risley, June 2, 1998: US05758823 (107 worldwide citation)

Synthetic jet actuator, which can be micromachined if desired, generates a synthetic jet stream characterized by a series of successive vortices that can be used for effectively entraining adjacent fluid. The synthetic jet actuator can be used to bend, or vector, a jet stream from another jet actuat ...


3
Ari Glezer, Mark G Allen, David J Coe, Barton L Smith, Mark A Trautman, John W Wiltse: Synthetic jet actuator and applications thereof. Georgia Tech Research Corporation, Thomas Kayden Horstemeyer & Risley L, April 20, 1999: US05894990 (56 worldwide citation)

A synthetic jet actuator, which can be micromachined if desired, generates a synthetic jet stream characterized by a series of successive vortices that can be used for effectively entraining adjacent fluid. The synthetic jet actuator can be used to bend, or vector, a jet stream from another jet actu ...


4
Philip H Bird, David J Coe, David H Paxman, Aart G Korteling: High voltage semiconductor with integrated low voltage circuitry. U S Philips, Steven R Biren, May 29, 1990: US04929884 (50 worldwide citation)

Low voltage semiconductor devices are integrated monolithically with a high voltage semiconductor device on an electrically conductive substrate. The substrate forms an electrode of the high voltage device and is connected in use to the high voltage terminal of a power supply. The low voltage device ...


5
David J Coe: Field-effect devices. U S Philips Corporation, Thomas A Briody, Robert T Mayer, Paul R Miller, May 26, 1981: US04270137 (34 worldwide citation)

A field-effect device, e.g. an insulated-gate field-effect transistor has field-relief means in the form of a polycrystalline silicon or other resistance layer connected between its gate and drain electrode to permit during operation of the device the formation of a potential distribution (V.sub.G, ...


6
David J Coe: High voltage guard ring with variable width shallow portion. U S Philips Corporation, Robert T Mayer, July 22, 1986: US04602266 (30 worldwide citation)

At least one annular region (11,12, . . . ) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reverse-biased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) a ...


7
David J Coe, Royce Lowis: Insulated-gate field-effect transistors. U S Philips Corporation, Robert T Mayer, Steven R Biren, June 4, 1985: US04521795 (29 worldwide citation)

An insulated-gate field-effect transistor which may be of the D-MOS or V-MOS type includes a source region (1) which is surrounded by a second region (2) of opposite conductivity type, itself surrounded by a third region (3) associated with the transistor drain (4). An insulated gate (12) of the tra ...


8
David J Coe: High voltage guard ring with variable width shallow portion. U S Philips, Robert T Mayer, September 27, 1988: US04774560 (28 worldwide citation)

At least one annular region (11,12, . . . ) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reverse-biased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) a ...


9
John M Shannon, John A G Slatter, David J Coe: Semiconductor devices having field-relief regions. U S Philips Corporation, Robert T Mayer, Steven R Biren, February 24, 1987: US04646115 (24 worldwide citation)

Separate areas of an active unipolar barrier, e.g. a Schottky barrier, of a semiconductor device are located between closely-spaced field-relief regions which provide the device with an improved voltage blocking characteristic. The flow of minority carriers into the adjacent body portion under forwa ...


10
David J Coe: Manufacture of vertical insulated gate field effect transistors. U S Philips Corporation, Paul R Miller, August 21, 1984: US04466175 (15 worldwide citation)

A vertical insulated gate field effect transistor is made by providing a polycrystalline semiconductor layer on an insulating layer at a surface of an n-type semiconductor body, and thereafter forming gates of the IGFET by laterally diffusing a p-type impurity into the polycrystalline semiconductor ...



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