1
Tyler A Lowrey, Randal W Chance, David A Cathey: Method for reducing, by a factor or 2.sup.-N, the minimum masking pitch of a photolithographic process. Micron Technology, Angus C Fox III, July 12, 1994: US05328810 (538 worldwide citation)

The process starts with a primary mask, which may be characterized as a pattern of parallel, photoresist strips having substantially vertical edges, each having a minimum feature width F, and being separated from neighboring strips by a minimum space width which is also approximately equal to F. Fro ...


2
Trung T Doan, J Brett Rolfson, Tyler A Lowrey, David A Cathey: Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology. Micron Technology, Lia M Pappas, July 20, 1993: US05229331 (204 worldwide citation)

A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited ...


3
David A Cathey, J Brett Rolfson: Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers. Micron Technology, Wells St John Roberts Gregory & Matkin, April 5, 1994: US05300463 (163 worldwide citation)

A method of utilizing and etching SiO.sub.2 in the processing of semiconductor wafers comprises: a) providing a layer of undoped SiO.sub.2 atop a wafer; b) providing a layer of doped SiO.sub.2 atop the layer of undoped SiO.sub.2 ; and c) wet etching the layer of doped SiO.sub.2 selectively relative ...


4
David A Cathey: Process for isotropically etching semiconductor devices. Micron Technology, October 25, 1994: US05358601 (152 worldwide citation)

The etchant material of this invention comprises a chemical etchant composition including a halogen-containing feed gas and gaseous carbon dioxide. Typically, the halogen-containing feed gas is a fluorine-containing or a chlorine-containing feed gas, or both a fluorine-containing and a chlorine-cont ...


5
David A Cathey, Chris C Yu, Trung T Doan, Tyler A Lowrey, J Brett Rolfson: Spacers for field emission display fabricated via self-aligned high energy ablation. Micron Technology, Lia M Pappas, August 3, 1993: US05232549 (145 worldwide citation)

Fabrication of spacer supports for use in flat panel displays through a process which involves 1) depositing an insulating material on an electrode plate, 2) optionally, patterning a reflective material superjacent the insulating material, 3) irradiating the electrode plate, and thereby removing the ...


6
Terry L Gilton, Mark E Tuttle, David A Cathey: Process for metallizing integrated circuits with electrolytically-deposited copper. Micron Technology, Angus C Fox III, September 29, 1992: US05151168 (131 worldwide citation)

A masked, conformal electrodeposition process for copper metallization of integrated circuits. The process is considerably less complex than other metallization processes utilizing electrodeposition, and provides excellent step coverage for sub-micron contact openings. Full-step coverage has been ob ...


7
Trung T Doan, Tyler A Lowrey, David A Cathey, J Brett Rolfson: Method to form self-aligned gate structures and focus rings. Micron Technology, Lia M Pappas, February 16, 1993: US05186670 (123 worldwide citation)

A selective etching and chemical mechanical planarization process for the formation of self-aligned gate and focus ring structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a firs ...


8
Tyler A Lowrey, Trung T Doan, David A Cathey, J Brett Rolfson: Method to form high aspect ratio supports (spacers) for field emission display using micro-saw technology. Micron Technology, Lia M Pappas, April 27, 1993: US05205770 (91 worldwide citation)

Fabrication of spacer supports for use in field emitter displays through a process which involves 1) forming a mold for the spacers in a substrate through the use of micro-saw technology, 2) filling the mold with a material that is selectively etchable with respect to the mold, 3) optionally, planar ...


9
David A Cathey: Method for etching high aspect ratio features. Micron Technology, Stephen A Gratton, April 25, 1995: US05409563 (86 worldwide citation)

A method for forming high aspect ratio features such as trenches in a semiconductor structure includes dry etching a substrate in a glow discharge system at elevated temperature. With the dry etching carried out at an elevated temperature of between about 300.degree. to 1100.degree. C., the diffusio ...


10
Trung T Doan, J Brett Rolfson, Tyler A Lowrey, David A Cathey: Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology. Micron Technology, Lia M Pappas, December 13, 1994: US05372973 (85 worldwide citation)

A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited ...