1
Taylor R Efland, Dave Cotton, Dale J Skelton: ESD protection structure using LDMOS diodes with thick copper interconnect. Texas Instruments Incorporated, Mark E Courtney, W James Brady III, Richard L Donaldson, November 21, 1995: US05468984 (167 worldwide citation)

An interconnection structure and method for a multiple zener diode ESD protectoin circuit for power semiconductor devices. A plurality of lateral Zener diodes is formed. Each device is formed of a plurality of cathode and anode diffusion regions to be coupled together to form the cathode and anode o ...


2
Taylor R Efland, Dave Cotton, Dale J Skelton: Method for LDMOS transistor with thick copper interconnect. Texas Instruments Incorporated, Dwight N Holmbo, Wade James Brady III, Frederick J Telecky Jr, April 16, 2002: US06372586 (22 worldwide citation)

A thick copper interconnection structure and method for an LDMOS transistor for power semiconductor devices. A large LDMOS transistor is formed of a plurality of source and drain diffusion regions to be coupled together to form the source and drain. Gate regions are formed between the alternating so ...


3
Ross Teggatz, Joe Devore, Dave Cotton, Bill Grose: Synchronous rectifying circuit. Texas Instruments Incorporated, Thomas G Eschweiler, James C Kesterson, Richard L Donaldson, May 30, 1995: US05420532 (17 worldwide citation)

A method of efficiently turning off inductive loads includes turning off a driving switch, monitoring a circuit output during turn-off, and activating a control circuit in response to an inductive flyback voltage at the output which turns on a recirculation switch and recirculates residual load curr ...


4
Taylor R Efland, Dave Cotton, Dale J Skelton: Ldmos transistor with thick copper interconnect. Texas Instruments Incorporated, W James Brady III, Frederick J Telecky Jr, November 21, 2000: US06150722 (11 worldwide citation)

A thick copper interconnection structure and method for an LDMOS transistor for power semiconductor devices. A large LDMOS transistor is formed of a plurality of source and drain diffusion regions to be coupled together to form the source and drain. Gate regions are formed between the alternating so ...


5


Click the thumbnails below to visualize the patent trend.