1
Daniel L Ellsworth, Paul A Sullivan: Method of fabricating a high density, low power, merged vertical fuse/bipolar transistor. NCR Corporation, J T Cavender, Casimer K Salys, March 24, 1987: US04651409 (114 worldwide citation)

A fuse programmable ROM includes a wafer for a CMOS-type structure having an emitter, which emitter is overlain by a fuse pad of an undoped polysilicon and a conductive layer. There is a layer of barrier oxide disposed on the conductive top layer of the fuse pad and a sidewall oxide surrounding the ...


2
Dao Long Chen, Daniel L Ellsworth: Wall outlet with direct current output. Hyundai Electronics America, NCR Corporation, Townsend and Townsend and Crew, May 9, 2000: US06061261 (74 worldwide citation)

An AC-DC voltage conversion integrate circuit that integrates all the control and protection circuits, as well as the power transistors, into a single module. Passive components, such as the transformer and capacitors, are very small, as the switching frequency is in the KHz or MHz range. Including ...


3
Dao Long Chen, Daniel L Ellsworth: Wall outlet with direct current output. AT&T Global Information Solutions Company, Hyundai Electronics America, Symbios Logic, Wayne P Bailey, October 8, 1996: US05563782 (66 worldwide citation)

An AC-DC voltage conversion integrate circuit that integrates all the control and protection circuits, as well as the power transistors, into a single module. Passive components, such as the transformer and capacitors, are very small, as the switching frequency is in the KHz or MHz range. Including ...


4
Maurice M Moll, Daniel L Ellsworth: Non-destructive method and circuit to determine the programmability of a one time programmable device. NCR Corporation, Wilbert Hawk Jr, Casimer K Salys, Floyd A Gonzalez, January 5, 1988: US04718042 (43 worldwide citation)

In a one time programmable memory device having a memory cell, a programmable device in the memory cell having a high initial resistance, a user readable circuit for reading the condition of the programmable device, and capacitance coupled with the initial resistance and having an RC time constant t ...


5
Daniel L Ellsworth, Maurice M Moll: Low current driver for gate array. NCR Corporation, Wilbert Hawk Jr, Stephen F Jewett, Douglas S Foote, July 2, 1991: US05029283 (34 worldwide citation)

A low current output driver for a gate array. The driver has first and second reference voltage sources, a first transistor of a first conductivity type, and a plurality of second transistors of a second conductivity type. The first transistor is connected between the first reference voltage source ...


6
Daniel L Ellsworth: Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions. NCR Corporation, J T Cavender, Casimer K Salys, September 11, 1984: US04470852 (31 worldwide citation)

A CMOS process utilizes preferential oxidation of arsenic-doped regions and the reduced diffusivity of boron in arsenic-doped regions to eliminate photomask steps and to form self-aligned enhanced p.sup.+ and n.sup.+ contacts.


7
Daniel L Ellsworth, Scott H Cravens, Maurice M Moll: Two mask technique for planarized trench oxide isolation of integrated devices. NCR Corporation, Wilbert Hawk Jr, Casimer K Salys, June 28, 1988: US04753901 (18 worldwide citation)

A two mask process for forming dielectrically filled planarized trenches of arbitrary width in a semiconductor substrate, the masks being of such character that they are amenable to computerized generation. The first mask defines the active regions and subdivides the trench isolation regions into a ...


8
Daniel L Ellsworth, Maurice M Moll: Two transistor full wave rectifier. NCR Corporation, Wilbert Hawk Jr, Casimer K Salys, October 17, 1989: US04875151 (17 worldwide citation)

An integrated circuit two transistor full wave rectifier suitable for fabrication in a CMOS, NMOS or PMOS process and characterized by a high level of integration based upon shared utilization of doped regions. In one form, the full wave rectifier is configured from two diode connected field effect ...


9
Daniel L Ellsworth, Dao Long Chen: Wall outlet having DC output. Hynix Semiconductor America, Hynix Semiconductor, March 24, 2003: KR1019950040945

PURPOSE: A wall outlet having a DC output is provided to supply a plurality of DC voltages by installing one or more integrated switch mode power supply IC within a wall outlet. CONSTITUTION: A wall outlet having a DC output includes an electric wall outlet, an A/D conversion portion, and a DC volta ...