1
Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W Key: Multiple doping level bipolar junctions transistors and method for forming. Agere Systems, March 27, 2012: US08143120 (97 worldwide citation)

A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors ar ...


2
Daniel Charles Kerr, Thomas Gregory McKay, Michael Carroll, Joseph M Gering: Linearity improvements of semiconductor substrate based radio frequency devices. RF Micro Devices, Withrow & Terranova P L L C, January 11, 2011: US07868419 (96 worldwide citation)

The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a h ...


3
Michael Carroll, Daniel Charles Kerr, Christian Rye Iversen, Philip Mason, Julio Costa, Edward T Spears: Semiconductor radio frequency switch with body contact. RF Micro Devices, Withrow & Terranova P L L C, May 13, 2014: US08723260 (30 worldwide citation)

The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction path ...


4
Daniel Charles Kerr, Thomas Gregory McKay, Michael Carroll, Joseph M Gering: Linearity improvements of semiconductor substrate based radio frequency devices. RF Micro Devices, Withrow & Terranova P L L C, December 13, 2011: US08076750 (23 worldwide citation)

The present invention relates to using a trap-rich layer, such as a polycrystalline Silicon layer, over a semiconductor substrate to substantially immobilize a surface conduction layer at the surface of the semiconductor substrate at radio frequency (RF) frequencies. The trap-rich layer may have a h ...


5
Daniel Charles Kerr, Thomas Gregory McKay, Michael Carroll, Joseph M Gering: Linearity improvements of semiconductor substrate using passivation. RF Micro Devices, Withrow & Terranova P L L C, March 29, 2011: US07915706 (18 worldwide citation)

The present invention relates to using a potentially trap-rich layer, such as a polycrystalline Silicon layer, over a passivation region of a semiconductor substrate or a Silicon-on-insulator (SOI) device layer to substantially immobilize a surface conduction layer at the surface of the semiconducto ...


6
Daniel Charles Kerr, David C Dening, Julio Costa: Integration of high-voltage devices and other devices. RF Micro Devices, Withrow & Terranova P L L C, December 15, 2009: US07633095 (11 worldwide citation)

Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transi ...


7
Michael Carroll, Julio Costa, Daniel Charles Kerr, Don Willis, Elizabeth Glass: Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same. RF Micro Devices, Withrow & Terranova P L L C, December 15, 2015: US09214337 (9 worldwide citation)

A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A t ...


8
Daniel Charles Kerr, David C Dening, Julio Costa: Integrated lateral high-voltage metal oxide semiconductor field effect transistor. RF Micro Devices, Withrow & Terranova P L L C, August 2, 2011: US07989889 (9 worldwide citation)

The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semicondu ...


9
Daniel Charles Kerr, Alan Sangone Chen, Edward Paul Martin Jr, Amal Ma Hamad, William A Russell: Structure and method for improved heat conduction for semiconductor devices. Agere Systems, March 18, 2008: US07345364 (8 worldwide citation)

A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of ...


10
Daniel Charles Kerr: Stacked body-contacted field effect transistor. RF Micro Devices, Withrow & Terranova P L L C, February 25, 2014: US08658475 (6 worldwide citation)

The present disclosure relates to a stacked body-contacted field effect transistor (FET) that includes multiple body-contacted FETs coupled in series and a lateral isolation band encircling a periphery of the multiple FETs. The multiple FETs include a first end FET having a first body, which is not ...