51
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: Method for forming EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, July 7, 1998: US05776810 (70 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


52
Daniel C Guterman, Isao Nojima, Ping Wang: NOVRAM cell using two differential decouplable nonvolatile memory elements. XICOR, McCubbrey Bartels Meyer & Ward, December 25, 1990: US04980859 (69 worldwide citation)

A nonvolatile, semiconductor randon access memory cell comprising a static RAM element and a nonvolatile memory element having differential charge storage capabilities is presented. The static RAM and nonvolatile memory elements are interconnected to allow information to be exchanged between two ele ...


53
Kevin M Conley, Daniel C Guterman, Carlos J Gonzalez: Method and structure for efficient data verification operation for non-volatile memories. SanDisk Corporation, Skjerven Morrill, May 6, 2003: US06560143 (66 worldwide citation)

An improved flash EEPROM memory-based storage subsystem includes one or more flash memory arrays, each with three data registers and a controller circuit. During a flash program operation, one data register is used to control the program operation, a second register is used to hold the target data v ...


54
Daniel C Guterman, Nima Mokhlesi, Yupin Fong: Bitline governed approach for program control of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus Harmon & DeNiro, March 28, 2006: US07020026 (60 worldwide citation)

In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage elem ...


55
Nima Mokhlesi, Daniel C Guterman, Geoffrey S Gongwer: Noise reduction technique for transistors and small devices utilizing an episodic agitation. SanDisk Corporation, Parsons Hsue & de Runtz, February 1, 2005: US06850441 (60 worldwide citation)

The present invention presents methods for reducing the amount of noise inherent in the reading of a non-volatile storage device by applying an episodic agitation (e.g. a time varying voltage) to some terminal(s) of the cell as part of the reading process. Various aspects of the present invention al ...


56
Daniel C Guterman, David L Henderson: Method of making high coupling ratio DMOS electrically programmable ROM. Texas Instruments Incorporated, John G Graham, March 2, 1982: US04317273 (58 worldwide citation)

An electrically programmable memory array of the floating gate type with a high coupling ratio is made by a DMOS process which allows the edges of the floating gates to be self-aligned with the edges of the control gates and produces improved characteristics in the form of higher gain and lower body ...


57
Carlos J Gonzalez, Daniel C Guterman: Reducing the effects of noise in non-volatile memories through multiple reads. SanDisk Corporation, Davis Wright Tremairne, December 7, 2010: US07848149 (56 worldwide citation)

Storage elements are read multiple times and the results are accumulated and averaged for each storage element to reduce the effects of noise or other transients in the storage elements and associated circuits that may adversely affect the quality of the read. Several techniques may be employed, inc ...


58
Eliyahou Harari, Daniel C Guterman, Robert F Wallace: Removable mother/daughter peripheral card. SanDisk Corporation, Skjerven Morrill MacPherson, April 30, 2002: US06381662 (54 worldwide citation)

A peripheral card having a Personal Computer (“PC”) card form factor and removably coupled externally to a host system is further partitioned into a mother card portion and a daughter card portion. The daughter card is removably coupled to the mother card. In the preferred embodiment, a low cost fla ...


59
Eliyahou Harari, George Samachisa, Daniel C Guterman, Jack H Yuan: Steering gate and bit line segmentation in non-volatile memories. SanDisk Corporation, Skjerven Morrill, March 11, 2003: US06532172 (52 worldwide citation)

Steering and bit lines (of a flash EEPROM system, for example) are segmented along columns of a memory cell array. In one embodiment, the steering and bit lines of one of their segments are connected at a time to respective global steering and bit lines. The number of rows of memory cells included i ...


60
Daniel C Guterman, Nima Mokhlesi, Yupin Fong: Bitline governed approach for coarse/fine programming. SanDisk Corporation, Vierra Magen Marcus & DeNiro, August 8, 2006: US07088621 (47 worldwide citation)

In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage elem ...