31
Carlos J Gonzalez, Daniel C Guterman: Reducing the effects of noise in non-volatile memories through multiple reads. SanDisk Corporation, Parsons Hsue & de Runtz, October 4, 2005: US06952365 (107 worldwide citation)

Storage elements are read multiple times and the results are accumulated and averaged for each storage element to reduce the effects of noise or other transients in the storage elements and associated circuits that may adversely affect the quality of the read. Several techniques may be employed, inc ...


32
Kevin M Conley, Daniel C Guterman, Carlos J Gonzalez: Method and structure for efficient data verification operation for non-volatile memories. SanDisk Corporation, Parsons Hsue & de Runtz, December 6, 2005: US06972993 (107 worldwide citation)

An improved flash EEPROM memory-based storage subsystem includes one or more flash memory arrays, each with three data registers and a controller circuit. During a flash program operation, one data register is used to control the program operation, a second register is used to hold the target data v ...


33
Daniel C Guterman, Nima Mokhlesi, Yupin Fong: Efficient verification for coarse/fine programming of non-volatile memory. SanDisk Corporation, Vierra Magen Marcus & DeNiro, November 21, 2006: US07139198 (106 worldwide citation)

A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified ...


34
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Flehr Hohbach Test Albritton & Herbert, August 14, 2001: US06275419 (104 worldwide citation)

Maximized multi-stage compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


35
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Parsons Hsue & de Runtz, May 17, 2005: US06894926 (101 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


36
Kevin M Conley, Daniel C Guterman, Carlos J Gonzalez: Method and structure for reliable data copy operation for non-volatile memories. Sandisk Corporation, Steven F Caserza, Flehr Hohbach Test Albritton & Herbert, July 24, 2001: US06266273 (101 worldwide citation)

An improved flash EEPROM memory-based storage subsystem includes one or more flash memory arrays, each with a duplicity of data registers and a controller circuit. When data are read from a flash array into a data register, the data is copied to a second register so that, during the ensuing program ...


37
Eliyahou Harari, Daniel C Guterman, Robert F Wallace: Removable mother/daughter peripheral card. SanDisk Corporation, Parsons Hsue & de Runtz, November 14, 2006: US07137011 (98 worldwide citation)

A peripheral card having a Personal Computer (“PC”) card form factor and removably coupled externally to a host system is further partitioned into a mother card portion and a daughter card portion. The daughter card is removably coupled to the mother card. In the preferred embodiment, a low cost fla ...


38
Shahzad B Khalid, Daniel C Guterman, Geoffrey S Gongwer, Richard Simko, Kevin M Conley: Writable tracking cells. SanDisk Corporation, Davis Wright Tremaine, November 27, 2007: US07301807 (95 worldwide citation)

The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time the user cells of the associated write block are written, preferably at the same time, using the same ...


39
Eliyahou Harari, Daniel C Guterman, George Samachisa, Jack H Yuan: Dual floating gate EEPROM cell array with steering gates shared adjacent cells. SanDisk Corporation, Skjerven Morrill MacPherson, July 24, 2001: US06266278 (95 worldwide citation)

An EEPROM system having an array of memory cells that individually include two floating gates, bit line source and drain diffusions extending along columns, steering gates also extending along columns and select gates forming word lines along rows of floating gates. The dual gate cell increases the ...


40
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Parsons Hsue & de Runtz, March 1, 2005: US06862218 (89 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...