1
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, April 22, 2008: US07361993 (11 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


2
Eb Eshun
Anthony K Stamper, Anil K Chinthakindi, Douglas D Coolbaugh, Timothy J Dalton, Daniel C Edelstein, Ebenezer E Eshun, Jeffrey P Gambino, William J Murphy, Kunal Vaed: Air gap under on-chip passive device. International Business Machines Corporation, Lisa U Jaklitsch, Daryl K Neff, February 16, 2010: US07662722 (10 worldwide citation)

A method is provided for fabricating a microelectronic chip which includes a passive device such, as an inductor, overlying an air gap. In such method, a plurality of front-end-of-line (“FEOL”) devices are formed in a semiconductor region of the microelectronic chip, and a plurality of stacked inter ...


3
Eb Eshun
Daniel C Edelstein, Anil K Chinthakindi, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Sarah L Lane, Anthony K Stamper: Integrated circuit comb capacitor. International Business Machines Corporation, Lisa U Jaklitsch, September 8, 2009: US07585722 (6 worldwide citation)

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention a ...


4
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, February 24, 2009: US07494912 (5 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


5
Eb Eshun
Douglas D Coolbaugh, Timothy J Dalton, Daniel C Edelstein, Ebenezer E Eshun, Jeffrey P Gambino, Kevin S Petrarca, Anthony K Stamper, Richard P Volant: Planar vertical resistor and bond pad resistor. International Business Machines Corporation, Lisa U Jaklitsch, Hoffman Warnick, July 1, 2008: US07394110 (4 worldwide citation)

Resistors that avoid the problems of miniaturization of semiconductor devices and a related method are disclosed. In one embodiment, a resistor includes a planar resistor material that extends vertically within at least one metal layer of a semiconductor device. In another embodiment, a resistor inc ...


6
Eb Eshun
Douglas D Coolbaugh, Timothy J Dalton, Daniel C Edelstein, Ebenezer E Eshun, Jeffrey P Gambino, Kevin S Petrarca, Anthony K Stamper, Richard P Volant: Planar vertical resistor and bond pad resistor and related method. International Business Machines Corporation, Hoffman Warnick, Lisa Jaklitsch, May 5, 2009: US07528048 (4 worldwide citation)

Resistors that avoid the problems of miniaturization of semiconductor devices and a related method are disclosed. In one embodiment, a resistor includes a planar resistor material that extends vertically within at least one metal layer of a semiconductor device. In another embodiment, a resistor inc ...


7
Eb Eshun
Daniel C Edelstein, Anil K Chinthakindi, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Sarah L Lane, Anthony K Stamper: Integrated circuit comb capacitor. International Business Machines Corporation, Katherine S Brown, February 21, 2012: US08120143 (1 worldwide citation)

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention a ...


8
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Joseph Petrokaitis, November 9, 2010: US07829452

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


9
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, November 9, 2006: US20060249848-A1

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


10
Eb Eshun
Daniel C Edelstein, Anil K Chinthakindi, Timothy J Dalton, Ebenezer E Eshun, Jeffrey P Gambino, Sarah L Lane, Anthony K Stamper: Integrated Circuit Comb Capacitor. International Business Machines Corporation, International Business Machines Corporation, Dept 18g, June 5, 2008: US20080130200-A1

The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches. The invention a ...