1
Dah Wen Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: Self-aligned power MOSFET device with recessed gate and source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, September 1, 1998: US05801417 (133 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


2
Dah Wen Tsang, Dumitru Sdrulla, Douglas A Pike Jr, Theodore O Meyer, John W Mosier II deceased: High density power device fabrication process using undercut oxide sidewalls. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, July 15, 1997: US05648283 (84 worldwide citation)

A gate power MOSFET on substrate (20) has a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. Layer (430) on surface (28) patterns areas (446) as stripes or a matrix, and protected areas. Undercut sidewalls (444) of thickness (452), with protruding rims (447), contact the si ...


3
Dah Wen Tsang, John W Mosier, Douglas A Pike, Theodore O Meyer: Self-aligned power MOSFET with enhanced base region. ADVANCED POWER TECHNOLOGY Delaware corporation, Marger Johnson & Mccollom PC, June 20, 2002: US20020074585-A1 (1 worldwide citation)

A power MOSFET transistor is formed on a substrate including a source, body layer, and drain layer and an optional fourth layer for an IGBT. The device is characterized by a conductive gate having a high conductivity metal layer coextensive with a polysilicon layer for high power and high speed oper ...


4
Jinshu Zhang, Dumitru Sdrulla, Dah Wen Tsang: Edge termination for high voltage semiconductor device. Microsemi Corporation, Marger Johnson & McCollom P C, February 7, 2012: US08110888

High voltage semiconductor devices with high-voltage termination structures are constructed on lightly doped substrates. Lightly doped p-type substrates are particularly prone to depletion and inversion from positive charges, degrading the ability of associated termination structures to block high v ...


5
Jinshu Zhang, Dumitru Sdrulla, Dah Wen Tsang: Edge termination for high voltage semiconductor device. Microsemi Corporation, Marger Johnson & Mccollom PC, March 19, 2009: US20090072340-A1

High voltage semiconductor devices with high-voltage termination structures are constructed on lightly doped substrates. Lightly doped p-type substrates are particularly prone to depletion and inversion from positive charges, degrading the ability of associated termination structures to block high v ...