1
Dah W Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: High density power device fabrication process. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, February 1, 1994: US05283201 (116 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


2
Douglas A Pike Jr, Dah W Tsang, James M Katana: IGBT process to produce platinum lifetime control. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, November 16, 1993: US05262336 (102 worldwide citation)

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is ...


3
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Method of making topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, May 28, 1991: US05019522 (54 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


4
Douglas A Pike Jr, Dah W Tsang, James M Katana, Dumitru Sdrulla: IGBT device with platinum lifetime control and reduced gaw. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, June 18, 1996: US05528058 (46 worldwide citation)

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is ...


5
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, September 3, 1991: US05045903 (46 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


6
Douglas A Pike Jr, Dah W Tsang, James M Katana, Dumitra Scrulla: IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, February 1, 1994: US05283202 (17 worldwide citation)

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is ...


7
Douglas A Pike Jr, Dah W Tsang, James M Katana: IGBT process to produce platinum lifetime control. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, March 2, 1993: US05190885

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is ...