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Dan M Mosher, Cornelia H Blanton, Joe R Trogolo, Larry Latham, David R Cotton, Bob Todd: Method of forming complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate. Texas Instruments Incorporated, B Peter Barndt, Richard L Donaldson, October 26, 1993: US05256582 (20 worldwide citation)

The present invention relates to a method of manufacturing a semiconductor integrated device and, more particularly, to a semiconductor integrated device having NPN and PNP power and logic devices combined with complementary MOS and DMOS devices. The present invention is a multipitaxial process for ...


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Dan M Mosher, Larry Latham, Bob Todd, Cornelia H Blanton, Joe R Trogolo, David R Cotton: Complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate. Texas Instruments Incorporated, B Peter Barndt, Richard L Donaldson, January 19, 1993: US05181095 (11 worldwide citation)

An integrated circuit device of a first N-type epitaxial layer over a substrate, a second P-type epitaxial layer over the first epitaxial layer, and a third N-type epitaxial layer over the second epitaxial layer, with a P-type buried ground region formed in a portion of the substrate, the ground reg ...


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Dan M Mosher, Cornelia H Blanton, Joe R Trogolo, Larry Latham, David R Cotton: Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same. Texas Instruments Incorporated, B Peter Barndt, Richard L Donaldson, October 6, 1992: US05153697 (7 worldwide citation)

An integrated circuit is formed on an N-type semiconductor wafer having a first N-type epitaxial layer on the substrate, a P-type epitaxial layer over the first N-type epitaxial layer, and a second N-type epitaxial layer over the P-type epitaxial layer. There are also a plurality of sets of P-type i ...