1
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Robert J Stern, Philip A Dalton, March 19, 1991: US05000113 (566 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


2
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: CVD of silicon oxide using TEOS decomposition and in-situ planarization process. Applied Materials, Schlemmer Dalton Associates, October 10, 1989: US04872947 (351 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


3
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Process for PECVD of silicon oxide using TEOS decomposition. Applied Materials, Philip A Dalton, January 9, 1990: US04892753 (292 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


4
Kam S Law, Cissy Leung, Ching C Tang, Kenneth S Collins, Mei Chang, Jerry Y K Wong, David Nin Kou Wang: Reactor chamber self-cleaning process. Applied Materials, Philip A Dalton, October 2, 1990: US04960488 (281 worldwide citation)

A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressur ...


5
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Plasma-enhanced CVD process using TEOS for depositing silicon oxide. Applied Materials, Philip A Dalton, Robert J Stern, November 8, 1994: US05362526 (254 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


6
Mei Chang, Cissy Leung, David N Wang, David Cheng: Process for CVD deposition of tungsten layer on semiconductor wafer. Applied Materials, John P Taylor, July 2, 1991: US05028565 (206 worldwide citation)

An improved process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvements comprise depositing tungsten on the semiconductor wafer in the presence of nitrogen gas to improve the reflectivity of the surface of the resulting layer o ...


7
David Nin Kou Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Birgit Morris, January 2, 2001: US06167834 (175 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


8
Alfred Mak, Kevin Lai, Cissy Leung, Dennis Sauvage: Low resistivity W using B2H6 nucleation step. Applied Materials, Townsend and Townsend and Crew, March 27, 2001: US06206967 (164 worldwide citation)

A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a depositio ...


9
Alfred Mak, Kevin Lai, Cissy Leung, Dennis Sauvage: Low resistivity W using B.sub.2 H.sub.6 nucleation step. Applied Materials, Townsend and Townsend and Crew, August 8, 2000: US06099904 (128 worldwide citation)

A multiple step chemical vapor deposition process for depositing a tungsten film on a substrate. A first step of the deposition process includes a nucleation step in which a process gas including a tungsten-containing source, a group III or V hydride and a reduction agent are flowed into a depositio ...


10
David N K Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Birgit E Morris, October 11, 1994: US05354715 (75 worldwide citation)

A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple ste ...