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Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Passive elements in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, March 8, 2007: WO/2007/027381 (113 worldwide citation)

An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a ...


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Mather Phillip, Chung Young Sir, Engel Bradley N: Improved magnetic sensor design for suppression of barkhausen noise. Mather Phillip, Chung Young Sir, Engel Bradley N, Everspin Technologies, KOCH William, October 1, 2009: WO/2009/120894 (6 worldwide citation)

A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four uns ...


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Chung Young Sir: Chemical probe field effect transistor for measuring the surface potential of a gate electrode. Motorola, October 30, 1996: EP0740151-A1 (5 worldwide citation)

A chemical probe field effect transistor (10) for measuring surface potential as a function of temperature and used for chemical sensing. Source and drain regions (14, 16) in a semiconductor substrate (12) define a channel region (34). A gate insulating layer (18) covers the channel region, and a ga ...


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Chung Young Sir, Evans Keenan L: Method of sensing a chemical and sensor therefor. Motorola, September 3, 1997: EP0793096-A2 (2 worldwide citation)

A sensor (10) includes a gate electrode (20) overlying a channel region (34). A gap (22) between the gate electrode (20) and the channel region (34) allows a surface (28) of the gate electrode (20) to be exposed to a chemical. Upon exposure to the chemical, a surface potential or an electrical imped ...


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Evans Keenan L, Chung Young Sir, Glaunsinger William, Soresen Ian Williard: Method of determing a gas concentration. Motorola, June 21, 1995: EP0658761-A1

An embodiment of a sensing element (10) for a gas vapor detector (24) is formed from a gold-palladium alloy. The sensing element (10) is highly sensitive to phosphine or arsine gas. The by volume palladium concentration of the sensing element is typically less than 20%. The sensing element (10) is u ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Methods of implementing magnetic tunnel junction current sensors. Freescale Semiconductor, lujin hua mude jun, November 5, 2008: CN200680040479

An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction (''MTJ'') core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in res ...


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Chung Young Sir, Baird Robert W, Engel Bradley N: Magnetic tunnel junction pressure sensors and methods. Freescale Semiconductor, tuchang cun, October 29, 2008: CN200680040311

An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction ('MTJ') core formed between the substrate and the current line. The conductive line is configured to move in response to the pressure, and carri ...


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Durlam Mark A, Chung Young Sir, Baird Robert W, Engel Bradley N: 3d inductor and transformer devices in mram embedded integrated circuits. Freescale Semiconductor, fujian jun, August 6, 2008: CN200680017817

An integrated circuit device includes a magnetic random access memory (MRAM) architecture and at least one inductance element formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal lay ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Magnetic tunnel junction temperature sensors and methods. Freescale Semiconductor, Huang Qihang, Mu Dejun, November 25, 2009: CN200680036312

Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction ('MTJ') temperature sensor is provided over the heat source. The MTJ temperature sensor comprises an MTJ core configured t ...