1
Ernest R Nolan, Diana C Duane, Todd H Herder, Thomas A Bishop, Kimcuc T Tran, Robert W Froehlich, Randy L German, Richard D Nelson, Chung J Lee, Mark R Breen, Kathryn V Keswick: Compliant electrically connective bumps for an adhesive flip chip integrated circuit device and methods for forming same. Microelectronics and Computer Technology Corporation, Baker & Botts, April 16, 1996: US05508228 (96 worldwide citation)

Compliant electrically connection bumps for an adhesive flip chip integrated circuit device and various methods for forming the bumps include the steps of forming polymer bumps on a substrate or an integrated circuit die and coating the polymer bumps with a metallization layer. The polymer bump form ...


2
Chung J Lee, Hui Wang, Giovanni Antonio Foggiato: Low dielectric constant materials and method. Quester Technology, Fliesler Dubb Meyer & Lovejoy, April 18, 2000: US06051321 (84 worldwide citation)

Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxan ...


3
Chung J Lee, Hui Wang, Giovanni Antonio Foggiato: Deposition systems and processes for transport polymerization and chemical vapor deposition. Quester Technology, Fliesler Dubb Meyer & Lovejoy, July 11, 2000: US06086679 (49 worldwide citation)

The described deposition systems are designed to accommodate new precursors and chemical processes used for transport polymerization and chemical vapor deposition. The systems consist primarily of a reactor, a liquid injector or gas mass flow controller, a cracker and a deposition chamber under sub- ...


4
Chung J Lee: Soluble silicone-imide copolymers. General Electric Company, Gary L Loser, May 6, 1986: US04586997 (43 worldwide citation)

There is provided a siloxane-imide copolymer composition having at least one polymeric block with a low glass transition temperature and at least one polymeric block with a high glass transition temperature. Preferred compositions have the general formula ##STR1##


5
Chung J Lee: Novel soluble polymidesiloxanes and methods for their preparation and use. Occidental Chemical Corporation, James F Tao, James F Mudd, May 9, 1989: US04829131 (25 worldwide citation)

Substantilly fully imidized polyimidesiloxanes which are based on a mixture consisting essentially of a biphenyl tetracarboxylic dianhydride and a benzophenone tetracarboxylic dianhydride, are soluble in diglyme which gives them particular utility in the micro-electronics industry. The polymers are ...


6
Chung J Lee, Hui Wang, Giovanni Antonio Foggiato: Chemicals and processes for making fluorinated poly(para-xylylenes). Quester Techology, Fliesler Dubb Meyer & Lovejoy, October 31, 2000: US06140456 (24 worldwide citation)

New starting materials and chemical processes will be used to make fluorinated poly(para-xylylenes) (F-PPX) and fluorinated poly(para-fluoroxylylenes) (F-PPFX). The processes will use some very low cost and readily available starting materials, catalysts, chemical reactors, transport polymerization ...


7
Chung J Lee: Crystalline silicone-imide copolymers. General Electric Company, Gary L Loser, December 10, 1985: US04558110 (22 worldwide citation)

There is provided a crystalline silicone-imide block copolymer comprising at least one imide-disiloxane block, wherein the imide portion of said imide-disiloxane block has a symmetrical aromatic radical as its nucleus, and at least one polydiorganosiloxane has at least about five siloxy units.


8
Chung J Lee, Hui Wang, Giovanni Antonio Foggiato: Precursors for making low dielectric constant materials with improved thermal stability. Quester Technology, Fliesler Dubb Meyer & Lovejoy, February 1, 2000: US06020458 (21 worldwide citation)

Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp.sup.2 C-F and some hyperconjugated sp.sup.3 C-F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silan ...


9
Charles W C Lin, Chung J Lee, Tom J Hirsch, Kimcuc T Tran: Method for producing conductive patterns. Microelectronics and Computer Technology, Pravel Hewitt Kimball & Krieger, October 25, 1994: US05358604 (19 worldwide citation)

The invention provides an apparatus and methods of using the apparatus to transfer conductive patterns onto substrates under conditions of heat and pressure. The apparatus comprises a master mold with a printing surface on which is produced a permanent mirror image of the conductive pattern to be cr ...


10
David Leksell, Ming Xi Chan, Joseph P Ellul, Jeanne L Luce, David T Ryan, Iqbal A Shareef, Chung J Lee, Giovanni Antonio Foggiato: Chamber for reducing contamination during chemical vapor deposition. Quester Technology, Fliesler Dubb Meyer & Lovejoy, June 27, 2000: US06079353 (19 worldwide citation)

This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas ...



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