1
Jong han Park, Chun geun Park, Seon ho Ha: Method for manufacturing a bump on a semiconductor chip. Samsung Electronics, Stephen R Whitt, Robert A Westerlund, Charles R Donohoe, May 23, 1995: US05418186 (53 worldwide citation)

A method for manufacturing a bump on a semiconductor comprising the steps of: forming metal pad on a portion of a surface of a substrate, forming a barrier metal layer over the surface of the substrate such that the barrier metal layer cover the metal pad, forming a photoresist layer over the barrie ...


2
Yool Kang, Sang Jun Choi, Dong Won Jung, Chun Geun Park, Young Bum Koh: Chemically amplified resist composition. Samsung Electronics, April 15, 1998: EP0836119-A1 (48 worldwide citation)

Copolymers and terpolymers are used in chemically amplified resists. One terpolymer is of the formula: Wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hy ...


3
Chun geun Park, Gi sung Yeo, Jung chul Park: Semiconductor substrate containing anti-reflective layer. Samsung Electronics, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, June 2, 1998: US05759755 (31 worldwide citation)

A method for manufacturing an anti-reflective layer comprises the steps of coating a polymer solution containing at least one compound selected from the group consisting of phenol-based resins, water-soluble resins and acryl resins as a main component, and then baking at a high temperature. The meth ...


4
Chun Geun Park: Method for manufacturing a semiconductor chip bump having improved contact characteristics. Samsung Electronics, Cushman Darby & Cushman, March 5, 1996: US05496770 (17 worldwide citation)

A connection bump of a semiconductor chip is formed by a photoresist pattern. The photoresist pattern is obtained through an exposure process by which photolithography solution layers of positive and/or negative type are repeatedly exposed and thereafter developed to obtain a photoresist pattern cor ...


5
Sang jun Choi, Chun geun Park, Young bum Koh: Photosensitive polymers and photoresist compositions containing the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, December 22, 1998: US05851727 (17 worldwide citation)

Photosensitive polymers are represented by the formula: ##STR1## wherein R1 is selected from the group consisting of hydrogen and methyl; R2 is selected from the group consisting of aliphatic hydrocarbon groups having from 6 to 20 carbon atoms; R3 is selected from the group consisting of a t-butyl g ...


6
Chun geun Park, Gi sung Yeo, Jung chul Park: Anti-reflective layer and method for manufacturing semiconductor device using the same. Samsung Electronics, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, January 14, 1997: US05593725 (10 worldwide citation)

A method for manufacturing an anti-reflective layer comprises the steps of coating a polymer solution containing at least one compound selected from the group consisting of phenol-based resins, water-soluble resins and acryl resins as a main component, and then baking at a high temperature. The meth ...


7
Sang jun Choi, Chun geun Park: Resist compositions for chemically amplified resists comprising a di(t-butyl)malonyl methyl side group in the base polymer. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 31, 1998: US05733704 (9 worldwide citation)

A resist composition by which high resolution patterns can be formed in a lithography process, due to its high sensitivity to light and large difference in solubilities in a developing solution before and after exposure to light, and which has excellent thermal characteristics. The resist compositio ...


8
Sang jun Choi, Chun geun Park, Hai won Lee: Chemically amplified resists. Samsung Electrics, Myers Bigel Sibley & Sajovec, November 9, 1999: US05981141 (6 worldwide citation)

In general, the invention provides polymers which may be used in chemically amplified resists. More particularly, the invention relates to esterified polymers containing the group: ##STR1## Resist compositions comprise the esterified polymers and photoacid generators.


9
Sang Jun Choi, Yool Kang, Dong Won Jung, Chun Geun Park: Photosensitive polymers and chemically amplified photoresist compositions using the same. Samsung Electronics, Jones Volentine P L L C, October 9, 2001: US06300036 (5 worldwide citation)

The compounds are of a class of photosensitive polymers for use in chemically amplified photoresists. These photoresists produce sharp line patterns when exposed with an ArF excimer laser. The polymer composition includes a copolymer and the photoresist composition includes a terpolymer with a photo ...


10
Sang jun Choi, Chun geun Park, Young bum Koh: Chemically amplified resist polymers. Samsung Electronics, Skjerven Morrill MacPherson Franklin & Friel, August 15, 2000: US06103845 (4 worldwide citation)

Copolymers and terpolyers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein the aliphatic hydrocarbon contains substituents selected from th ...