1
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Formation of planar strained layers. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, May 4, 2004: US06730551 (55 worldwide citation)

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. Th ...


2
Eugene Fitzgerald
Matthew T Currie, Anthony J Lochtefeld, Christopher W Leitz, Eugene A Fitzgerald: Semiconductor devices having strained dual channel layers. AmberWave Systems Corporation, Goodwin Procter, November 21, 2006: US07138310 (26 worldwide citation)

A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentrati ...


3
Eugene Fitzgerald
Christopher W Leitz, Minjoo L Lee, Eugene A Fitzgerald: Enhancement of P-type metal-oxide-semiconductor field effect transistors. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, July 12, 2005: US06916727 (9 worldwide citation)

A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are sele ...


4
Eugene Fitzgerald
Matthew T Currie, Anthony J Lochtefeld, Christopher W Leitz, Eugene A Fitzgerald: Methods of fabricating semiconductor devices having strained dual channel layers. AmberWave Systems Corporation, Goodwin Procter, July 28, 2009: US07566606 (8 worldwide citation)

A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentrati ...


5
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structure and method for a high-speed semiconductor device having a Ge channel layer. Massachusetts Institute of Technology, Goodwin Procter, November 27, 2007: US07301180 (8 worldwide citation)

The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate ...


6
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structures with planar strained layers. AmberWave Systems Corporation, Goodwin Procter, November 28, 2006: US07141820 (7 worldwide citation)

A structure including a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer may be formed over the compressively strained layer. The compressively strained layer is substantially planar, ...


7
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Formation of planar strained layers. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, February 6, 2003: US20030025131-A1 (3 worldwide citation)

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. Th ...


8
Eugene Fitzgerald
Matthew T Currie, Anthony J Lochtefeld, Christopher W Leitz, Eugene A Fitzgerald: Semiconductor devices having strained dual channel layers. AmberWave Systems Corporation, Testa Hurwitz & Thibeault, February 12, 2004: US20040026765-A1 (3 worldwide citation)

A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentrati ...


9
Eugene Fitzgerald
Christopher W Leitz, Minjoo L Lee, Eugene A Fitzgerald: Enhancement of p-type metal-oxide-semiconductor field effect transistors. AmberWave Systems Corporation, Testa Hurwitz & Thibeault, December 26, 2002: US20020197803-A1 (1 worldwide citation)

A structure includes a tensile strained layer disposed over a substrate, the tensile strained layer having a first thickness. A compressed layer is disposed between the tensile strained layer and the substrate, the compressed layer having a second thickness. The first and second thicknesses are sele ...


10
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structure and method for a high-speed semiconductor device having a Ge channel layer. Massachusetts Institute of Technology, Goodwin Procter, May 7, 2013: US08436336

The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate ...