1
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method for depositing an amorphous carbon layer. Applied Materials, Moser Patterson and Sheridan, June 3, 2003: US06573030 (499 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


2
Judy H Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S Ngai, Bok Hoen Kim: Method and apparatus for reducing copper oxidation and contamination in a semiconductor device. Applied Materials, Moser Patterson & Sheridan, March 12, 2002: US06355571 (27 worldwide citation)

A method and apparatus for reducing oxidation of an interface of a semiconductor device thereby improving adhesion of subsequently formed layers and/or devices is disclosed. The semiconductor device has at least a first layer and a second layer wherein the interface is disposed between said first an ...


3
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method of depositing an amorphous carbon layer. Applied Materials, Moser Patterson & Sheridan, January 11, 2005: US06841341 (24 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


4
Nagarajan Rajagopalan, Joe Feng, Christopher S Ngai, Meiyee, Suketu A Parikh, Linh H Thanh: Method for forming silicon containing layers on a substrate. Applied Materials, Townsend and Townsend and Crew, December 2, 2003: US06656840 (23 worldwide citation)

A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first l ...


5
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method of depositing an amorphous carbon layer. Applied Materials, Patterson and Sheridan, May 29, 2007: US07223526 (22 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


6
Judy H Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S Ngai, Bok Hoen Kim: Plasma treatment for copper oxide reduction. Applied Materials, Moser Patterson & Sheridan, September 20, 2005: US06946401 (16 worldwide citation)

The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improv ...


7
Hongching Shan, Kenny L Doan, Jingbao Liu, Michael S Barnes, Hong D Nguyen, Christopher Dennis Bencher, Christopher S Ngai, Wendy H Yeh, Eda Tuncel, Claes H Bjorkman: Ashable layers for reducing critical dimensions of integrated circuit features. Applied Materials, Michaelson & Associates, September 12, 2006: US07105442 (4 worldwide citation)

A method is described for decreasing the critical dimensions of integrated circuit features in which a first masking layer (101) is deposited, patterned and opened in the manner of typical feature etching, and a second masking layer (201) is deposited thereon prior to etching the underlying insulato ...


8
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method of depositing an amorphous carbon layer. Applied Materials, Patterson & Sheridan, February 26, 2008: US07335462 (2 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


9
Huixiong Dai, Xumou Xu, Christopher S Ngai: Line edge roughness reduction and double patterning. Applied Materials, Blakely Sokoloff Taylor & Zafman, August 6, 2013: US08501395 (2 worldwide citation)

Embodiments of the present invention relate to lithographic processes used in integrated circuit fabrication for improving line edge roughness (LER) and reduced critical dimensions (CD) for lines and/or trenches. Embodiments use the combinations of polarized light lithography, shrink coating process ...


10
Judy H Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S Ngai, Bok Hoen Kim: Semiconductor device having reduced oxidation interface. Applied Materials, Moser Patterson & Sheridan, March 2, 2004: US06700202 (1 worldwide citation)

A method and apparatus for reducing oxidation of an interface of a semiconductor device thereby improving adhesion of subsequently formed layers and/or devices is disclosed. The semiconductor device has at least a first layer and a second layer wherein the interface is disposed between said first an ...