1
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method for depositing an amorphous carbon layer. Applied Materials, Moser Patterson and Sheridan, June 3, 2003: US06573030 (499 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


2
Wei Liu, Thorsten B Lill, David S L Mui, Christopher Dennis Bencher: Method for fabricating a gate structure of a field effect transistor. Applied Materials, Moser Patterson & Sheridan, Joseph Bach, August 2, 2005: US06924191 (282 worldwide citation)

A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The ...


3
Christopher Dennis Bencher: Removable amorphous carbon CMP stop. Applied Materials, Moser Patterson & Sheridan, April 1, 2003: US06541397 (184 worldwide citation)

A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for pr ...


4
Christopher Dennis Bencher, Jing Tang: Integral patterning of large features along with array using spacer mask patterning process flow. Applied Materials, Townsend and Townsend and Crew, May 4, 2010: US07709396 (80 worldwide citation)

Embodiments of the present invention pertain to methods of forming patterned features on a substrate having an increased density (i.e. reduced pitch) as compared to what is possible using standard photolithography processing techniques using a single high-resolution photomask while also allowing bot ...


5
Ian Latchford, Christopher Dennis Bencher, Yuxiang Wang, Mario Dave Silvetti: Photolithography scheme using a silicon containing resist. Applied Materials, Moser Patterson & Sheridan, November 22, 2005: US06967072 (27 worldwide citation)

A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into ...


6
Judy H Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S Ngai, Bok Hoen Kim: Method and apparatus for reducing copper oxidation and contamination in a semiconductor device. Applied Materials, Moser Patterson & Sheridan, March 12, 2002: US06355571 (27 worldwide citation)

A method and apparatus for reducing oxidation of an interface of a semiconductor device thereby improving adhesion of subsequently formed layers and/or devices is disclosed. The semiconductor device has at least a first layer and a second layer wherein the interface is disposed between said first an ...


7
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method of depositing an amorphous carbon layer. Applied Materials, Moser Patterson & Sheridan, January 11, 2005: US06841341 (24 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


8
Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang: Method of depositing an amorphous carbon layer. Applied Materials, Patterson and Sheridan, May 29, 2007: US07223526 (22 worldwide citation)

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integ ...


9
Wendy H Yeh, Sang Ahn, Christopher Dennis Bencher, Hichem M Saad, Sudha Rathi: Nitrogen-free antireflective coating for use with photolithographic patterning. Applied Materials, Townsend & Townsend & Crew, February 8, 2005: US06853043 (19 worldwide citation)

A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 3 ...


10
Judy H Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S Ngai, Bok Hoen Kim: Plasma treatment for copper oxide reduction. Applied Materials, Moser Patterson & Sheridan, September 20, 2005: US06946401 (16 worldwide citation)

The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improv ...