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Ashok Challa, Alan Elbanhawy, Steven P Sapp, Peter H Wilson, Babak S Sani, Christopher B Kocon: Power semiconductor devices and methods of manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 18, 2008: US07345342 (196 worldwide citation)

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other tech ...


2
Christopher B Kocon, Jun Zeng: High density MOS-gated power device and process for forming same. Intersil Corporation, Jaeckle Fleischmann & Mugel, February 13, 2001: US06188105 (120 worldwide citation)

A high density MOS-gated device comprises a semiconductor substrate and a doped upper layer of a first conduction type disposed on the substrate. The upper layer comprises a heavily doped source region of the first conduction type and a doped well region of a second and opposite conduction type at a ...


3
Christopher B Kocon: MOS-gated power device having extended trench and doping zone and process for forming same. Intersil Corporation, Jaeckle Fleischmann & Mugel, March 6, 2001: US06198127 (116 worldwide citation)

A trench MOS-gated device comprises a doped monocrystalline semiconductor substrate that includes an upper layer and is of a first conduction type. An extended trench in the upper layer of the substrate has a bottom portion filled with a dielectric material that forms a thick layer in the bottom of ...


4
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods of making power semiconductor devices with thick bottom oxide layer. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, March 27, 2012: US08143124 (110 worldwide citation)

A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a char ...


5
Christopher B Kocon: MOS-gated devices with alternating zones of conductivity. Fairchild Semiconductor Corporation, Jaeckle Fleischmann & Mugel, April 23, 2002: US06376878 (108 worldwide citation)

This disclosure describes variety of MOS gated devices constructed with alternating conductivity type lower zones. These zones are used for depleting charge when blocking voltage is applied. When alternating zones are incorporated in the devices they allow use of a much higher conductivity material ...


6
Christopher B Kocon, Thomas E Grebs, Joseph L Cumbo, Rodney S Ridley: MOS-gated power device having segmented trench and extended doping zone and process for forming same. Fairchild Semiconductor Corporation, Thomas R FitzGerald, August 13, 2002: US06433385 (84 worldwide citation)

A trench MOS-gated device comprises a doped monocrystalline semiconductor substrate that includes an upper layer and is of a first conduction type. An extended trench in the substrate in the upper layer comprises two segments having differing widths relative to one another: a bottom segment of lesse ...


7
Christopher B Kocon, Alan Elbanhawy: Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses. Fairchild Semiconductor Corporation, Thomas R FitzGerald, Larry S Roach, March 22, 2005: US06870220 (56 worldwide citation)

A gate structure for a semiconductor device includes a shielding electrode and a switching electrode. Respective portions of the shielding electrode are disposed above said drain region and said well region. A first dielectric layer is disposed between the shielding electrode and the drain and well ...


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Ashok Challa, Alan Elbanhawy, Steven P Sapp, Peter H Wilson, Babak S Sani, Christopher B Kocon: Trenched shield gate power semiconductor devices and methods of manufacture. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, July 19, 2011: US07982265 (43 worldwide citation)

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trenc ...


10
Christopher B Kocon, Thomas E Grebs, Joseph L Cumbo, Rodney S Ridley: Process for forming MOS-gated power device having segmented trench and extended doping zone. Fairchild Semiconductor Corporation, Thomas R FitzGerald Esq, January 6, 2004: US06673681 (43 worldwide citation)

A process for constructing a trench MOS-gated device includes: forming in a semiconductor substrate an extended trench that comprises an upper segment and a bottom segment, wherein the bottom segment has a lesser width relative to a greater width of the trench upper segment and extends to a depth co ...