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Kouros Ghandehari, Jean Y Yang, Christopher A Spence: Semiconductor manufacturing resolution enhancement system and method for simultaneously patterning different feature types. Advanced Micro Devices, Mikio Ishimaru, February 7, 2006: US06994939 (144 worldwide citation)

A method and system of making a mask with a transparent substrate thereon is provided. A first resolution enhancement structure is formed on the first portion of the transparent substrate. A second resolution enhancement structure is formed on a second portion of the transparent substrate, with the ...


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Christopher A Spence: Method of optical lithography using phase shift masking. Advanced Micro Devices, Foley & Lardner, June 16, 1998: US05766806 (51 worldwide citation)

A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gat ...


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Cyrus Tabery, Chris Haidinyak, Todd P Lukanc, Luigi Capodieci, Carl P Babcock, Hung eil Kim, Christopher A Spence: Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results. Advanced Micro Devices, Renner Otto Boisselle and Sklar, April 17, 2007: US07207017 (50 worldwide citation)

A method of generating a metrology recipe includes identifying regions of interest within a device layout. A coordinate list, which corresponds to the identified regions of interest, can be provided and used to create a clipped layout, which can be represented by a clipped layout data file. The clip ...


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Christopher A Spence: Method of optical lithography using phase shift masking. Advanced Micro Devices, Foley & Lardner, November 12, 1996: US05573890 (50 worldwide citation)

A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gat ...


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Christopher A Spence: Mask for optical lithography using phase shift masking and integrated circuit produced therefrom. Advanced Micro Devices, Foley & Lardner, December 30, 1997: US05702848 (45 worldwide citation)

A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gat ...


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Christopher A Spence: Method for evaluation of reticle image using aerial image simulator. Advanced Micro Devices, Renner Otto Boisselle and Sklar, October 10, 2006: US07120285 (40 worldwide citation)

A method of evaluating a wafer structure formation process includes extracting the outline of an actual mask pattern, and simulating a lithographic process using the actual mask pattern to obtain a simulated wafer structure. The extracting the outline of the actual mask pattern may include, for exam ...


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Christopher A Spence: Method of optical lithography using phase shift masking. Advanced Micro Devices, Foley & Lardner, June 16, 1998: US05766804 (32 worldwide citation)

A method of performing poly level lithography in manufacturing an integrated circuit using a phase shift mask in a step and repeat optical tool where the phase assignment for said phase shift mask is determined by a technique which determines, without assignment conflict, the Intersection of the gat ...


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Christopher A Spence: Piezo programmable reticle for EUV lithography. Advanced Micro Devices, Renner Otto Boisselle & Skar, March 12, 2002: US06356340 (26 worldwide citation)

A programmable reticle has a plurality of addressable pixels. Each of the pixels has one or more elastic elements which underlie a reflective surface, the elements each being activatable for selectively deforming part of the reflective surface. The amount of deformation is such that light reflected ...



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