1
Christiaan J Werkhoven, Ivo Raaijmakers, Suvi P Haukka: Method of forming graded thin films using alternating pulses of vapor phase reactants. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, March 18, 2003: US06534395 (459 worldwide citation)

Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cycli ...


2
Michael A Todd, Keith D Weeks, Christiaan J Werkhoven, Christophe F Pomarede: Method to form ultra high quality silicon-containing compound layers. ASM America, Knobbe Martens Olson & Bear, November 20, 2007: US07297641 (110 worldwide citation)

Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer ...


3
Christiaan J Werkhoven, Ivo Raaijmakers, Suvi P Haukka: Graded thin films. ASM International, Knobbe Martens Olson & Bear, August 23, 2005: US06933225 (98 worldwide citation)

Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cycli ...


4
Christiaan J Werkhoven, Ivo Raaijmakers, Suvi P Haukka: Graded thin films. ASM International, Knobbe Martens Olson & Bear, March 9, 2004: US06703708 (64 worldwide citation)

Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cycli ...


5
Michael A Todd, Keith D Weeks, Christiaan J Werkhoven, Christophe F Pomarede: Method to form ultra high quality silicon-containing compound layers. ASM America, Knobbe Martens Olson & Bear, January 26, 2010: US07651953 (47 worldwide citation)

Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer ...


6
Michael A Todd, Keith D Weeks, Christiaan J Werkhoven, Christophe F Pomarede: Method to form ultra high quality silicon-containing compound layers. ASM America, Knobbe Martens Olson & Bear, June 21, 2011: US07964513 (46 worldwide citation)

Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer ...


7
Christiaan J Werkhoven, Ivo Raaijmakers, Chantal Arena: Silicon-on-insulator structures and methods. ASM America, Knobbe Martens Olson & Bear, November 18, 2008: US07452757 (11 worldwide citation)

Silicon-on-insulator (SOI) structures are provided by forming a single-crystal insulator over a substrate, followed by heteroepitaxy of a semiconductor layer thereover. Atomic layer deposition (ALD) is preferably used to form an amorphous insulator, followed by solid phase epitaxy to convert the lay ...


8
Chantal Arena, Christiaan J Werkhoven, Ronald Thomas Bertram Jr, Ed Lindow: Thermalization of gaseous precursors in CVD reactors. Soitec, Winston & Strawn, March 5, 2013: US08388755 (7 worldwide citation)

The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the inven ...


9
Suvi P Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christiaan J Werkhoven: Thin films. ASM International, Knobbe Martens Olson & Bear, July 19, 2011: US07981791 (5 worldwide citation)

Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during ...


10
Christiaan J Werkhoven, Ivo Raaijmakers, Suvi P Haukka: Graded thin films. Knobbe Martens Olson & Bear, February 13, 2003: US20030032281-A1 (5 worldwide citation)

Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cycli ...