1
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, May 12, 2009: US07531679 (21 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


2
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James T Y Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Margaret Chappuis, September 19, 2006: US07108771 (11 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


3
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, August 31, 2010: US07786320 (11 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


4
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Hultquist IP, Margaret Chappuis, March 22, 2011: US07910765 (8 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


5
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, September 9, 2008: US07423166 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


6
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Atmi, February 26, 2004: US20040039219-A1 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


7
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low-K dielectric thin films and chemical vapor deposition method of making same. Margaret Chappuis, ATMI, April 3, 2003: US20030064154-A1 (2 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


8
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James TY Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Intellectual Property Technology Law, June 26, 2003: US20030116421-A1 (1 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


9
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low dielectric constant thin films and chemical vapor deposition method of making same. Oliver A Zitzmann, ATMI, November 21, 2002: US20020172766-A1 (1 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


10
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Hultquist PLLC, Mary B Grant, Margaret Chappuis, April 10, 2012: US08153833

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...



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