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Eb Eshun
Chinthakindi Anil K, Eshun Ebenezer E: Thin film resistors with current density enhancing layer (cdel). International Business Machines Corporation, Chinthakindi Anil K, Eshun Ebenezer E, JAKLITSCH Lisa U, August 24, 2006: WO/2006/088709 (1 worldwide citation)

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material (20) and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material (20) and enables the said thin film resistor to carry hi ...


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Eb Eshun
Chinthakindi Anil K, Eshun Ebenezer E: Thin film resistors with current density enhancing layer (cdel). International Business Machines Corporation, Wang Sibeng, February 10, 2010: CN200680004973

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material and enables the said thin film resistor to carry higher curre ...


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Eb Eshun
Chinthakindi Anil K, Eshun Ebenezer E: Thin film resistors with current density enhancing layer (cdel). Ibm, October 31, 2007: EP1849167-A2

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material and enables the said thin film resistor to carry higher curre ...


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Chinthakindi Anil K, Groves Robert A, Tretiakov Youri V, Vaed Kunal, Volant Richard P: Method for forming suspended transmission line structures in back end of line processing. International Business Machines Corporation, Chinthakindi Anil K, Groves Robert A, Tretiakov Youri V, Vaed Kunal, Volant Richard P, JAKLITSCH Lisa U, November 24, 2005: WO/2005/112105 (6 worldwide citation)

A method for forming a transmission line structure (300) for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids (308) created by the ...


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Chinthakindi Anil K, Jeng Shwu Jen, Lofaro Michael F, Schnabel Christopher M, Stein Kenneth J: Method for forming mimcap (metal, insulator, metal capacitor) and resistor to same level. Internatl Business Mach Corp &Lt IBM&Gt, July 29, 2004: JP2004-214649 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a process which reduces the number of treatment processes, eliminates a problem about an integration of the process such as a via landing on a resistor and a capacitor, and improves a performance and a property to be used.SOLUTION: An insulating oxide layer is accumu ...


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