1
Sang Hyuk Kim, Dongqing Yang, Young S Lee, Weon Young Jung, Sang jin Kim, Ching Mei Hsu, Anchuan Wang, Nitin K Ingle: Dry-etch for selective oxidation removal. Applied Materials, Kilpatrick Townsend & Stockton, June 23, 2015: US09064816 (86 worldwide citation)

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into ...


2
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023732 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


3
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, July 28, 2015: US09093371 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


4
Xikun Wang, Ching Mei Hsu, Nitin K Ingle, Zihui Li, Anchuan Wang: Dry-etch for selective tungsten removal. Applied Materials, Kilpatrick Townsend & Stockton, March 17, 2015: US08980763 (85 worldwide citation)

Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma efflu ...


5
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, October 6, 2015: US09153442 (84 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


6
Zhijun Chen, Jingchun Zhang, Ching Mei Hsu, Seung Park, Anchuan Wang, Nitin K Ingle: Radical-component oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023734 (84 worldwide citation)

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a ...


7
Jie Liu, Jingchun Zhang, Anchuan Wang, Nitin K Ingle, Seung Park, Zhijun Chen, Ching Mei Hsu: Selective titanium nitride etching. Applied Materials, Kilpatrick Townsend & Stockton, December 30, 2014: US08921234 (83 worldwide citation)

Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into ...


8
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, November 10, 2015: US09184055 (82 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


9
Ching Mei Hsu, Nitin K Ingle, Hiroshi Hamana, Anchuan Wang: Low temperature gas-phase carbon removal. Applied Materials, Kilpatrick Townsend & Stockton, June 28, 2016: US09378969 (42 worldwide citation)

A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate pro ...


10
Xikun Wang, Ching Mei Hsu, Nitin K Ingle, Zihui Li, Anchuan Wang: Dry-etch for selective tungsten removal. Applied Materials, Kilpatrick Townsend & Stockton, August 9, 2016: US09412608 (39 worldwide citation)

Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma efflu ...