1
Ching Hwa Chen, David Arnett, David Liu: Plasma cleaning method for removing residues in a plasma treatment chamber. LAM Research Corporation, Burns Doane Swecker & Mathis, October 18, 1994: US05356478 (227 worldwide citation)

A plasma cleaning method for removing residues previously formed in a plasma treatment chamber by dry etching layers such as photoresist, barriers, etc., on a wafer. The method includes introducing a cleaning gas mixture of an oxidizing gas and a chlorine containing gas into the chamber followed by ...


2
Ching Hwa Chen, David Liu, Duc Tran: Method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window. LAM Research Corporation, Burns Doane Swecker & Mathis, November 29, 1994: US05368710 (80 worldwide citation)

A method of plasma treating an article in a housing having a chamber in which the article such as a wafer can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to the chamber. A radiofrequency energy ...


3
Ching Hwa Chen, Gerald Yin, Takashi Inoue: Method of producing flat ECR layer in microwave plasma device and apparatus therefor. Lam Research Corporation, Burns Doane Swecker & Mathis, March 30, 1993: US05198725 (56 worldwide citation)

A microwave plasma generating device including a plasma chamber for generating plasma, a reaction chamber having a specimen stage on which a specimen is treated with the plasma, a gas supply for supplying gas to the plasma generating chamber, a microwave generator for generating a microwave electric ...


4
Chuck Jang, Zhong Dong, Vei Han Chan, Ching Hwa Chen: Atomic layer deposition of interpoly oxides in a non-volatile memory device. ProMOS Technologies, MacPherson Kwok Chen & Heid, October 17, 2006: US07122415 (51 worldwide citation)

Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved re ...


5
Phillip Lawrence Jones, Seyed Jafar Jafarian Tehrani, Boris V Atlas, David R Chen Liu, Ken Edward Tokunaga, Ching Hwa Chen: Dynamic feedback electrostatic wafer chuck. Lam Research Corporation, Beyer & Weaver, September 22, 1998: US05812361 (47 worldwide citation)

An electrostatic chuck system having an electrostatic chuck for securely holding a wafer on a surface of the electrostatic chuck. The electrostatic chuck system comprises a wafer bias sensor coupled to a first portion of the electrostatic chuck for sensing an alternating current signal at the first ...


6
Ching Hwa Chen, David Liu, Duc Tran: Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber. Lam Research Corporation, Burns Doane Swecker & Mathis, July 13, 1993: US05226967 (46 worldwide citation)

An apparatus for plasma etching or plasma deposition including a housing having a chamber in which a wafer can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to the chamber. A radiofrequency energ ...


7
Ching Hwa Chen, David Pirkle, Takashi Inoue, Takashi Inoue, Shunji Miyahara, Masahiko Tanaka: Window for microwave plasma processing device. Lam Research Corporation, Burns Doane Swecker & Mathis, August 10, 1993: US05234526 (44 worldwide citation)

A microwave transmitting window for a plasma processing device. The window is a body of one or more pieces of the same or different dielectric materials. A surface of the window facing a microwave transmitting horn or waveguide is planar and extends perpendicularly to an axial direction. An opposite ...


8
Ching Hwa Chen, David Liu, Mark J Christensen: Gas dispersion window for plasma apparatus and method of use thereof. Lam Research Corporation, Burns Doane Swecker & Mathis L, October 20, 1998: US05824605 (27 worldwide citation)

A gas dispersion window for a plasma etching or plasma deposition reactor including a housing having a chamber in which an article can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to the chamber ...


9
Wen Ben Chou, Rajinder Dhindsa, Ching Hwa Chen: Clean chemistry low-k organic polymer etch. Lam Research Corporation, Beyer Weaver & Thomas, January 8, 2002: US06337277 (21 worldwide citation)

A method of cleanly etching an organic polymer layer disposed over a substrate is disclosed. The invention is particularly useful in damascene processing where openings are etched in the organic polymer layer to form interconnects. The method includes lowering the temperature of the substrate. The m ...


10
Yun Yen Jack Yang, Ching Hwa Chen, Yea Jer Arthur Chen: Metal and metal silicide nitridization in a high density, low pressure plasma reactor. Lam Research Corporation, Beyer Weaver & Thomas, April 24, 2001: US06221792 (15 worldwide citation)

A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density low p ...