1
Tue Nguyen, Chien Hsiung Peng, Bruce Dale Ulrich: Hard mask method for transferring a multi-level photoresist pattern. Sharp Microelectronics Technology, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, October 13, 1998: US05821169 (49 worldwide citation)

A method is provided for forming intermediate levels in an integrated circuit dielectric during a damascene process using a hard mask layer to transfer the pattern of a photoresist mask having at least one intermediate thickness. The dielectric is covered with a hard mask layer, and the hard mask la ...


2
Seshu B Desu, Chien Hsiung Peng: Metalorganic chemical vapor deposition of ferroelectric thin films. Sharp Kabushiki Kaisha, Virginia Polytechnic Institute and State University, Ceram, Beaton & Folsom, July 11, 1995: US05431958 (32 worldwide citation)

A method to produce high quality doped and undoped lead zirconate titanate (PZT) thin films by metalorganic chemical vapor deposition is disclosed. The PZT thin films with the perovskite structure were deposited on sapphire disks, Pt/Ti/SiO.sub.2 /Si wafers, and RuO.sub.x /SiO.sub.2 /Si wafers by bo ...


3
Seshu Desu, Chien Hsiung Peng, Tian Shi: Coating porous materials with metal oxides and other ceramics by MOCVD. Center For Innovative Technology, Whitham & Marhoefer, November 16, 1993: US05262199 (23 worldwide citation)

Metal organic chemical vapor deposition (MOCVD) is used to form a layer of a metal oxide on the surfaces and within the pores of a porous ceramic material. The metal oxide is formed from one or more inexpensive metal organic precursors which permeate the pores of the substrate as a vapor. Surface re ...


4
Chien Hsiung Peng, Seshu B Desu, Jie Si: Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices. Virginia Polytechnic Institute and State University, Davis Graham & Stubbs, April 29, 1997: US05625587 (22 worldwide citation)

A ferroelectric memory device having a perovskite thin film of a rare earth manganate and processes for manufacturing the same. The perovskite thin film layer has properties consistent with high quality nonvolatile memory devices. The perovskite thin film layer can be applied by a MOCVD process, by ...


5
Tue Nguyen, Sheng Teng Hsu, Jer shen Maa, Bruce Dale Ulrich, Chien Hsiung Peng: Method for transferring a multi-level photoresist pattern. Sharp Laboratories of America, David C Ripma, Mathew D Rabdau, March 28, 2000: US06043164 (14 worldwide citation)

A method is provided for forming an intermediate level in an integrated circuit dielectric during a damascene process using a photoresist mask having an intermediate thickness. The method forms an interconnect to a first depth in the dielectric through an opening in the photoresist pattern. The phot ...


6
Jie Si, Seshu B Desu, Chien Hsiung Peng: Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 /(Ba.sub.1-x Sr.sub.x)TIO.sub.3 /(Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1- Sr.sub.x)RuO.sub.3 capacitors for high dielectric materials. Sharp Kabushiki Kaisha, Virginia Tech Intellectual Properties, Davis Graham & Stubbs, May 13, 1997: US05629229 (14 worldwide citation)

A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heat ...


7
Jer Shen Maa, Sheng Teng Hsu, Chien Hsiung Peng: Nitride overhang structures for the silicidation of transistor electrodes with shallow junction. Sharp Laboratories of America, Sharp Kabushiki Kaisha, David C Ripma, November 23, 1999: US05989965 (12 worldwide citation)

A method of forming a temporary overhang structure to shield the source/drain edges near the gate electrode from the deposition of silicidation metal is provided. The growth of silicide on the source/drain regions remains controlled, without the presence of silicidation metal on the gate electrode s ...


8
Jie Si, Seshu B Desu, Chien Hsiung Peng: Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)RuO.sub.3 /Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1-x SR.sub.x)RuO.sub.3 capacitors for high dielectric materials. Sharp Kabushiki Kaisha, Virginia Tech Intellectual Properties, Davis Graham & Stubbs, February 10, 1998: US05717234 (12 worldwide citation)

A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heat ...


9
Jer Shen Maa, Sheng Teng Hsu, Chien Hsiung Peng: MOS transistor having shallow source/drain junctions and low leakage current. Sharp Laboratories of America, Sharp Kabushiki Kaisha, David C Ripma, Matthew D Rabdau, Scott C Kreiger, April 17, 2001: US06218249 (11 worldwide citation)

A process of forming silicide at uniform rates across the entire source/drain region is provided. A two-step annealing method permits the thickness of the silicide formed on the edge of a silicon electrode to be substantially the same as it is in the center of the electrode. A first, low temperature ...


10
Jer Shen Maa, Sheng Teng Hsu, Chien Hsiung Peng: Partial silicidation method to form shallow source/drain junctions. Sharp Laboratories of America, Sharp Kabushiki Kaisha, David C Ripma, Matthew D Rabdau, June 6, 2000: US06071782 (9 worldwide citation)

A process of forming silicide at uniform rates across the entire source/drain region is provided. A two-step annealing method permits the thickness of the silicide formed on the edge of a silicon electrode to be substantially the same as it is in the center of the electrode. A first, low temperature ...