1
Jian Chen, Chi Ming Wang: Variable programming of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus Harmon & DeNiro, March 28, 2006: US07020017 (391 worldwide citation)

Systems and methods in accordance with various embodiments can provide for reduced program disturb in non-volatile semiconductor memory. In one embodiment, select memory cells such as those connected to a last word line of a NAND string are programmed using one or more program verify levels or volta ...


2
Raul Adrian Cernea, Rushyah Tang, Douglas Lee, Chi Ming Wang, Daniel Guterman: Non-volatile memory with improved sensing and method therefor. SanDisk Corporation, Majestic Parsons Siebert & Hsue, March 28, 2000: US06044019 (146 worldwide citation)

Floating gate memories such as EEPROM and flash EEPROM have the memory state of a memory cell thereof determined by sensing the conduction current of the cell. Inherent noise fluctuations in the conduction current during sensing are canceled out by averaging the sensing over a predetermined period o ...


3
Jian Chen, Chi Ming Wang: Systems for variable programming of non-volatile memory. SanDisk Corporation, Vierra Magen Marcus & DeNiro, August 21, 2007: US07259987 (87 worldwide citation)

Systems and methods in accordance with various embodiments can provide for reduced program disturb in non-volatile semiconductor memory. In one embodiment, select memory cells such as those connected to a last word line of a NAND string are programmed using one or more program verify levels or volta ...


4
John S Mangan, Daniel C Guterman, George Samachisa, Brian Murphy, Chi Ming Wang: Method of reducing disturbs in non-volatile memory. SanDisk Corporation, Parsons Hsue & de Runtz, May 27, 2003: US06570785 (85 worldwide citation)

In a non-volatile memory, the displacement current generated in non-selected word lines that results when the voltage levels on an array's bit lines are changed can result in disturbs. Techniques for reducing these currents are presented. In a first aspect, the number of cells being simultaneou ...


5
John S Mangan, Daniel C Guterman, George Samachisa, Brian Murphy, Chi Ming Wang, Khandker N Quader: Method of reducing disturbs in non-volatile memory. SanDisk Corporation, Parson Hsue & de Runtz, April 6, 2004: US06717851 (71 worldwide citation)

In a non-volatile memory, the displacement current generated in non-selected word lines that results when the voltage levels on an array's bit lines are changed can result in disturbs. Techniques for reducing these currents are presented. In a first aspect, the number of cells being simultaneou ...


6
Yongliang Wang, Raul A Cernea, Chi Ming Wang: Voltage generation circuitry having temperature compensation. SanDisk Corporation, Beyer Weaver & Thomas, October 5, 2004: US06801454 (57 worldwide citation)

Techniques for producing and utilizing temperature compensated voltages to accurately read signals (e.g., voltages) representing data stored in memory cells of a memory system are disclosed. The memory system is, for example, a memory card. The magnitude of the temperature compensation can be varied ...


7
Prashanti Govindu, Feng Pan, Man Mui, Gyuwan Kwon, Trung Pham, Chi Ming Wang: Implementation of output floating scheme for hv charge pumps. SanDisk Corporation, Beyer Law Group, May 6, 2008: US07368979 (45 worldwide citation)

According to different embodiments of the present invention, various methods, devices and systems are described for managing power in charge pumps in a non-volatile memory system having a high voltage charge pump and associated regulator. A method includes the following operations, receiving an oper ...


8
Raul Adrian Cernea, Rushyah Tang, Douglas Lee, Chi Ming Wang, Daniel Guterman: Non-volatile memory with improved sensing and method therefor. SanDisk Corporation, Skjerven Morrill MacPherson, August 28, 2001: US06282120 (41 worldwide citation)

Floating gate memories such as EEPROM and flash EEPROM have the memory state of a memory cell thereof determined by sensing the conduction current of the cell Inherent noise fluctuations in the conduction current during sensing are canceled out by averaging the sensing over a predetermined period of ...


9
Raul Adrian Cernea, Rushyah Tang, Douglas Lee, Chi Ming Wang, Daniel Guterman: Non-volatile memory with improved sensing and method therefor. SanDisk Corporation, Parsons Hsue & de Runtz, December 9, 2003: US06661708 (41 worldwide citation)

Floating gate memories such as EEPROM and flash EEPROM have the memory state of a memory cell thereof determined by sensing the conduction current of the cell. Inherent noise fluctuations in the conduction current during sensing are canceled out by averaging the sensing over a predetermined period o ...


10
Raul Adrian Cernea, Rushyah Tang, Douglas Lee, Chi Ming Wang, Daniel Guterman: Non-volatile memory with improved sensing and method therefor. SanDisk Corporation, Skjerven Morrill, December 3, 2002: US06490200 (40 worldwide citation)

Floating gate memories such as EEPROM and flash EEPROM have the memory state of a memory cell thereof determined by sensing the conduction current of the cell. Inherent noise fluctuations in the conduction current during sensing are canceled out by averaging the sensing over a predetermined period o ...