1
Chi I Lang, Judy H Huang, Michael Barnes, Sunil Shanker: CVD flowable gap fill. Novellus Systems, Weaver Austin Villeneuve & Sampson, March 29, 2011: US07915139 (198 worldwide citation)

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so ...


2
Farhad K Moghadam, David W Cheung, Ellie Yieh, Li Qun Xia, Wai Fan Yau, Chi I Lang, Shin Puu Jeng, Frederic Gaillard, Shankar Venkataraman, Srinivas Nemani: Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound. Applied Materials, Moser Patterson & Sheridan, July 2, 2002: US06413583 (151 worldwide citation)

A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre- ...


3
Chi I Lang, Judy H Huang, Michael Barnes, Sunil Shanker: CVD flowable gap fill. Novellus Systems, Weaver Austin Villeneuve & Sampson, September 1, 2009: US07582555 (81 worldwide citation)

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so ...


4
Nitin Kumar, Jinhong Tong, Chi I Lang, Tony Chiang, Prashant B Phatak: Methods for forming nonvolatile memory elements with resistive-switching metal oxides. Intermolecular, December 8, 2009: US07629198 (77 worldwide citation)

Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The ...


5
Vishal Gauri, Raashina Humayun, Chi I Lang, Judy H Huang, Michael Barnes, Sunil Shanker: Flowable film dielectric gap fill process. Novellus Systems, Weaver Austin Villeneuve & Sampson, February 15, 2011: US07888233 (72 worldwide citation)

Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled ...


6
Vishal Gauri, Raashina Humayun, Chi I Lang, Judy H Huang, Michael Barnes, Sunil Shanker: Flowable film dielectric gap fill process. Novellus Systems, Weaver Austin Villeneuve & Sampson, April 28, 2009: US07524735 (72 worldwide citation)

Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled ...


7
Sunil Shanker, Chi I Lang: Pulsed bias having high pulse frequency for filling gaps with dielectric material. Novellus Systems, Thomas Swenson, April 7, 2009: US07514375 (56 worldwide citation)

During bottom filling of high aspect ratio gaps and trenches in an integrated circuit substrate using HDP-CVD, a pulsed HF bias is applied to the substrate. In some embodiments, pulsed HF bias is applied to the substrate during etching operations. The pulsed bias typically has a pulse frequency in a ...


8
Nitin Kumar, Chi I Lang, Tony Chiang, Zhi wen Sun, Jinhong Tong: Methods for forming resistive switching memory elements. Intermolecular, July 5, 2011: US07972897 (52 worldwide citation)

Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductiv ...


9
Tony P Chiang, Sunil Shanker, Chi I Lang: Vapor based combinatorial processing. Intermolecular, May 14, 2013: US08440259 (46 worldwide citation)

A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent ...


10
Chi I Lang, Shin Puu Jeng, Yeming Jim Ma, Fong Chang, Peter Wai Man Lee, David W Cheung: Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds. Applied Materials, Moser Patterson & Sheridan, March 23, 2004: US06709715 (43 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer fil ...