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Cheung Patrick K, Khathuria Ashok M: Self aligned memory element and wordline. Advanced Micro Devices, sCOLLOPY Daniel R, June 24, 2004: WO/2004/053930 (1 worldwide citation)

An organic polymer memory cell is provided having an organic polymer layer (116, 2108, 2132, 2168) and an electrode layer (120, 2112, 2128, 2164) formed over a first conductive (e.g., copper) layer (e.g., bitline) (104, 108). The memory cells are connected to a second conductive layer (e.g., forming ...


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Tripsas Nicholas, Buynoski Matthew S, Pangrle Suzette, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, April 19, 2006: GB2419231-A

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Cheung Patrick K, Khathuria Ashok M: Self aligned memory element and wordline. Advanced Micro Devices, September 7, 2005: EP1570533-A2

An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrod ...


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Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V, sCOLLOPY Daniel R, February 3, 2005: WO/2005/010892

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Cheung Patrick K, Khathuria Ashok M: Self aligned memory element and wordline. Advanced Micro Devices, ge bo cheng wei, December 28, 2005: CN03825582

An organic polymer memory cell is provided having an organic polymer layer and an electrode layer formed over a first conductive (e.g., copper) layer (e.g., bitline). The memory cells are connected to a second conductive layer (e.g., forming a wordline), and more particularly the top of the electrod ...


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Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, May 3, 2006: KR1020067000426

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Cheung Patrick K, Khathuria Ashok M: Self aligned memory element and wordline. Advanced Micro Devices, August 29, 2005: KR1020057010298

An organic polymer memory cell is provided having an organic polymer layer (116, 2108, 2132, 2168) and an electrode layer (120, 2112, 2128, 2164) formed over a first conductive (e. g., copper) layer (e.g., bitline) (104, 108). The memory cells are connected to a second conductive layer (e.g., formin ...



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