1
Charles W Pearce: Method for manufacturing a laterally diffused metal oxide semiconductor device. Agere Systems, December 29, 2009: US07638380 (81 worldwide citation)

A laterally diffused metal oxide semiconductor (LDMOS) device and a method of manufacture therefor. The method of manufacturing the LDMOS device includes forming an amorphous region in a semiconductor substrate between isolation structures and adjacent a gate structure, by implanting an amorphizing ...


2
Charles W Pearce, Vincent J Zaleckas: Gettering semiconductor wafers with a high energy laser beam. Western Electric Company, Robert Y Peters, December 26, 1978: US04131487 (37 worldwide citation)

A semiconductor wafer from which devices, such as transistors, integrated circuits or the like, are to be formed is gettered. This is done by directing a high energy beam, such as a laser beam, on the surface of the wafer opposite to the surface on which the devices are to be formed. The beam is abs ...


3
Bryan C Chung, Gerald N DiBello, Charles W Pearce, Kevin P Yanders: Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow. AT&T Bell Laboratories, Roderick B Anderson, August 9, 1994: US05336371 (36 worldwide citation)

In a wafer fabrication process in which a photoresist stripper must be removed from the surface of a semiconductor wafer, the photoresist stripper is rinsed by inserting the wafer in a vessel (23, FIG. 3) filled with water and simultaneously pumping carbon dioxide and water into the vessel to cause ...


4
Charles W Pearce, Paul F Schmidt: Diffusion furnace. Bell Telephone Laboratories, Western Electric Company, W O Schellin, August 31, 1982: US04347431 (27 worldwide citation)

A diffusion furnace (11) includes a typical process tube (12) and an outer envelope (26) which forms an annular chamber (37) with the process tube. A heating element (29) of high purity graphite substantially surrounds the process tube within the chamber (37). Inner surfaces of the chamber (37) are ...


5
Robert J Lavigna, Charles W Pearce, Raymond E Reusser: Real-time analysis and control of melt-chemistry in crystal growing operations. Western Electric Company, George W Houseweart, Robert Y Peters, January 16, 1979: US04134785 (15 worldwide citation)

To improve the control over resistivity of grown single crystalline ingots, to reduce the turn-around time between growth of successive ingots in a particular crystal grower and to enable recycling of otherwise junk material, a sample of a molten material (the "melt") from which the ingot is to be g ...


6
James T Clemens, Dinesh A Mehta, James T Nelson, Charles W Pearce, Robert C Sun: MOS Dynamic memory in a diffusion current limited semiconductor structure. Bell Telephone Laboratories Incorporated, Western Electric Co, W O Schellin, A J Torsiglieri, August 5, 1980: US04216489 (13 worldwide citation)

In a dynamic MOS (Metal Oxide Semiconductor) random access memory, reverse bias leakage currents which deplete stored charges are reduced by minimizing minority carrier generation-type currents. By so minimizing these currents, the leakage currents become dominated by minority carrier diffusion curr ...


7
Charles W Pearce: Trailer anchor apparatus. Hugh E Smith, July 6, 1993: US05224311 (12 worldwide citation)

An anchor structure for fixedly securing a mobile home or trailer tongue relative to an underlying ground support is provided, wherein the organization includes respective right and left parallel legs mounted to a base arranged for subsequent mounting in a subterranean orientation relative to the as ...


8
William G Easter, John A Maze III, Sailesh M Merchant, Frank Miceli, Charles W Pearce: Curvilinear chemical mechanical planarization device and method. Agere Systems, March 25, 2003: US06537135 (6 worldwide citation)

The present invention relates to an apparatus and method for polishing substrate surfaces. The method can include the steps of holding a substrate against a polishing surface and depositing slurry on the polishing surface. The method can further include the step of moving the holding device in a sub ...


9
Charles W Pearce: Method of manufacturing a laterally diffused metal oxide semiconductor device. Agere Systems, April 19, 2011: US07927939 (1 worldwide citation)

A method of manufacturing a laterally diffused metal oxide semiconductor (LDMOS) device, and an integrated circuit associated therewith. The method includes forming a lightly-doped source/drain region with a first dopant, the lightly-doped source/drain region located between first and second isolati ...


10
Robert J Griffin, Charles W Pearce: Method of manufacturing a channel stop implant in a semiconductor device. Agere Systems, October 29, 2002: US06472279 (1 worldwide citation)

The present invention provides a method of manufacturing a semiconductor device, and a related method manufacturing an integrated circuit. In one embodiment, the method of manufacturing a semiconductor device includes creating a source/drain region between an electrode and an isolation structure loc ...