1
Charles B Zarowin, L David Bollinger: Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films. Hughes Aircraft Company, Michael W Sales, Wanda K Denson Low, March 1, 1994: US05290382 (171 worldwide citation)

A gas, which is flowed into a plasma chamber 12 positioned "upstream" from a etching reaction site on a substrate 20, is converted into a plasma and its active species by the application of excitation. The means for excitation may be radio frequency power or microwave power. The excitation is decoup ...


2
Alan R Reinberg, George N Steinberg, Charles B Zarowin: Inductively coupled discharge for plasma etching and resist stripping. The Perkin Elmer Corporation, T P Murphy, E T Grimes, F L Masselle, February 14, 1984: US04431898 (65 worldwide citation)

Apparatus for plasma etching of semiconductor devices. A plasma chamber is inductively coupled to a source of A.C. power wherein the semiconductor devices are etched. Alternately, the semiconductor devices may be etched or stripped at a location downstream of the plasma chamber.


3
Charles B Zarowin: Optical figuring by plasma assisted chemical transport and etching apparatus therefor. The Perkin Elmer Corporation, Thomas P Murphy, Edwin T Grimes, Francis L Masselle, May 26, 1987: US04668366 (36 worldwide citation)

The present invention is directed to method and apparatus for figuring a surface by plasma assisted chemical transport by means of mounting the surface to be processed on at least one electrode of an R.F. driven reactor having two parallel plate electrodes; passing reactive gas through the reactor t ...


4
Charles B Zarowin, L David Bollinger: Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films. Hughes Aircraft Company, Michael W Sales, W K Denson Low, August 9, 1994: US05336355 (29 worldwide citation)

A reactor 10 having a vacuum housing 30 which encloses a plasma chamber 14 is used to perform local plasma assisted chemical etching on an etchable substrate 12. The chamber 14 is movable and is sized according to the removal material footprint desired. An rf driven electrode 22 and rf driven gas di ...


5
Charles B Zarowin: Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates. Hughes Aircraft Company, M E Lachman, M W Sales, W K Denson Low, December 27, 1994: US05376224 (27 worldwide citation)

A plasma is used in conjunction with a plasma assisted chemical etching material removal tool 10 to rapidly and precisely polish and smooth a substrate without mechanically contacting the surface. The pressure of a process gas, which disassociates into reactive plasma species in the presence of an a ...


6
Charles B Zarowin, L David Bollinger: Method to determine tool paths for thinning and correcting errors in thickness profiles of films. Hughes Aircraft Company, Michael W Sales, Wanda K Denson Low, March 1, 1994: US05291415 (26 worldwide citation)

A method to determine the tool path of a material removal tool which is part of a system to shape the surface of a substrate is disclosed. The method conditions initial metrology data of the substrate into a dwell time versus position on the surface for the removal tool. The dwell time array is subs ...


7
Charles B Zarowin, L David Bollinger: Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching. Hughes Aircraft Company, Michael W Sales, Wanda Denson Low, August 24, 1993: US05238532 (26 worldwide citation)

A high pressure plasma is used in conjunction with a plasma assisted chemical etching material removal tool 10 to rapidly remove subsurface damage from a substrate without mechanically contacting the surface and without introducing new microscopic or atomic damage to the substrate.


8
George N Steinberg, Charles B Zarowin: Electrode assembly useful in confined plasma assisted chemical etching. Hughes Aircraft Company, M E Lachman, M W Sales, W K Denson Low, March 29, 1994: US05298103 (20 worldwide citation)

An electrode assembly (10) for use in confined plasma assisted chemical etching includes an electrode (16) having a D.C. voltage source (46) connected thereto in addition to a source (60) of R. F. voltage such that ions formed during during plasma etching process are slowed or repelled from the elec ...


9
Charles B Zarowin, Robert Baron: Plasma assisted chemical transport method and apparatus. Hughes Electronics Corporation, V D Duraiswamy, W K Denson Low, September 22, 1998: US05811021 (19 worldwide citation)

A plasma assisted chemical transport system for additive or subtractive shaping of a substrate surface employs a plasma head (30) that generates a plasma (34) and is caused to scan the surface of a workpiece (51) to provide selective shaping, either by etching or depositing material. Corrosive gases ...


10
N Venkataramanan, Charles B Zarowin: Diamond-like carbon films and process for production thereof. The Perkin Elmer Corporation, Thomas P Murphy, Edwin T Grimes, Francis L Masselle, March 3, 1987: US04647512 (16 worldwide citation)

Improved diamond-like carbon films of improved properties are deposited on various substrates utilizing a plasma assisted chemical vapor transport process (PACVT) process in which hydrogen is employed as the reactive process feedgas and in which the deposition process is conducted in a controllably ...



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