1
Castrucci Paul P: Information card. International Business Machines Corporation, November 7, 1972: US3702464 (130 worldwide citation)

An information card for credit and accounting system having a monolithic or solid state memory for storage of information responsive to computer controlled systems.


2
Castrucci Paul P, Gates Harlan R, Henle Robert A, Pricer Wilbur David, Morton Robert M, Mason John W, North William D: Write once read only store semiconductor memory. International Business Machines Corporation, February 8, 1972: US3641516 (83 worldwide citation)

A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a for ...


3
Castrucci Paul P, Grochowski Edward G, North William D, Palfi Thomas L: Method of making a common emitter transistor integrated circuit structure. International Business Machines Corporation, Kraft J B, February 11, 1975: US3865648 (17 worldwide citation)

A planar integrated semiconductor circuit having common emitter transistor elements isolated from each other and from other transistors by the emitter regions which form a PN or rectifying junction with the body of the semiconductor member in which the integrated circuit is formed. In a semiconducto ...


4
Castrucci Paul P, Hess Martin S, Maheras George, North William D, Grochowski Edward G: SEMICONDUCTOR DEVICE FABRICATION UTILIZING ORIENTED SUBSTRATE MATERIAL. International Business Machines Corporation, June 15, 1971: US3585464 (9 worldwide citation)

A semiconductor device and a method for fabricating the same which is composed of a monocrystalline semiconductor body having a surface crystallographic orientation substantially parallel to a plane and having a PN junction formed in the body. The body has an insulator coating, such as silicon dioxi ...


5
Castrucci Paul P, Grochowski Edward G, North William D, Palfi Thomas L: Common emitter transistor integrated circuit structure. International Business Machines Corporation, March 7, 1972: US3648130 (8 worldwide citation)

A planar integrated semiconductor circuit having common emitter transistor elements isolated from each other and from other transistors by the emitter regions which form a PN- or rectifying junction with the body of the semiconductor member in which the integrated circuit is formed. In a semiconduct ...


6
Castrucci Paul P, Mason John W: Planar dielectric isolated integrated circuits. October 16, 1973: US3766438 (7 worldwide citation)

A method for fabricating dielectric isolated integrated devices which allows the formation of a truly planar surface. The method includes etching isolation channels in a semiconductor substrate through a suitable mask. The mask pattern is designed to enhance deeper etching at certain locations in th ...


7
Agusta Benjamin, Bardell Paul H, Castrucci Paul P, Henle Robert A, Pecorato Raymond P: Monolithic integrated structure including fabrication and packaging therefor. International Business Machines Corporation, May 8, 1973: US3731375 (4 worldwide citation)

A method of making a monolithic integrated semiconductor structure that has a plurality of functionally isolated individual cells that are electrically interconnected. Each of the cells is an object of mirror image cell that is vertically, horizontally and diagonally displaced from the object cell. ...


8
Castrucci Paul P, Grochowski Edward G, North William D, Palfi Thomas L: Common emitter transistor integrated circuit structure. International Business Machines Corporation, Kraft Julius B, April 2, 1974: US3801836 (4 worldwide citation)

A planar integrated semiconductor circuit having common emitter transistor elements isolated from each other and from other transistors by the emitter regions which form a PN or rectifying junction with the body of the semiconductor member in which the integrated circuit is formed. In a semiconducto ...


9
Castrucci Paul P, Grochowski Edward G, Hess Martin S, Maheras George, North William D: SEMICONDUCTOR DEVICE FABRICATION UTILIZING ORIENTED SUBSTRATE MATERIAL. International Business Machines Corporation, Galvin Thomas F, Saile George O, January 15, 1974: US3785886 (3 worldwide citation)

A method for fabricating a semiconductor device which is composed of a monocrystalline semiconductor body having a surface crystallographic orientation substantially parallel to a plane and having a PN junction formed in the body. The body has an insulator coating, such as silicon dioxide, over the ...


10
Agusta Benjamin, Bardell Paul H, Castrucci Paul P, Henle Robert A, Pecoraro Raymond P: Monolithic integrated structure including fabrication and package therefor. International Business Machines Corporation, Galanthay Theodore E, July 9, 1974: US3823348 (3 worldwide citation)

A monolithic integrated semiconductor structure is described that has a plurality of functionally isolated individual cells that are electrically interconnected. Each of the cells is an object or mirror image cell that is vertically, horizontally and diagonally displaced from the object cell. The pl ...