1
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris, November 25, 2003: US06653027 (5 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


2
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris, February 22, 2005: US06858357 (2 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. Ibm Corporation, Intellectual Property Law Dept, August 29, 2002: US20020119378-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


4
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Cameron James Brooks, S Jay Chey, C Richard Guarnieri, Michael Straight Hibbs, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. Dr Daniel P Morris Esq, IBM Corporation, March 18, 2004: US20040053026-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained ...


5
Evon C Greanias, C Richard Guarnieri, John J Seeland Jr, Guy F Verrier, Robert L Donaldson: Combined finger touch and stylus detection system for use on the viewing surface of a visual display device. International Business Machines Corporation, John E Hoel, August 11, 1987: US04686332 (504 worldwide citation)

A combined finger touch and stylus detection system is disclosed for use on the viewing surface of the visual display device. Transparent conductors arranged in horizontal and vertical grid are supported on a flexible, transparent overlay membrane which is adaptable to a variety of displays. A uniqu ...


6
Marie Angelopoulos, Ari Aviram, C Richard Guarnieri, Wu Song Huang, Ranee Kwong, Wayne M Moreau: Antireflective silicon-containing compositions as hardmask layer. International Business Machines Corporation, Steven Capella, July 16, 2002: US06420088 (91 worldwide citation)

Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties whi ...


7
Marie Angelopoulos, Ari Aviram, C Richard Guarnieri, Wu Song Huang, Ranee Kwong, Wayne M Moreau: Antireflective silicon-containing compositions as hardmask layer. International Business Machines Corporation, Steven Capella, January 7, 2003: US06503692 (41 worldwide citation)

Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties whi ...


8
Marie Angelopoulos, Ari Aviram, C Richard Guarnieri, Wu Song Huang, Ranee Kwong, Robert N Lang, Arpan P Mahorowala, David R Medeiros, Wayne M Moreau: Mask-making using resist having SIO bond-containing polymer. International Business Machines Corporation, Steven Capella, July 16, 2002: US06420084 (38 worldwide citation)

The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses method ...


9
Jerome J Cuomo, C Richard Guarnieri, Jeffrey A Hopwood: Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination. International Business Machines Corporation, Daniel P Morris, Sterne Kessler Goldstein & Fox, July 18, 1995: US05433812 (35 worldwide citation)

A shield for shunting capacitive electric fields generated by an RF coil away from a gas plasma process chamber's dielectric window and toward ground. The shield comprise an electrically conducting, substantially planar body section having a periphery and adapted to be located between the RF coil an ...


10
Jerome J Cuomo, C Richard Guarnieri, Jeffrey A Hopwood: Method for enhanced inductive coupling to plasmas with reduced sputter contamination. International Business Machines Corporation, Daniel P Morris, Sterne Kessler Goldstein & Fox P L L C, April 22, 1997: US05622635 (19 worldwide citation)

A method of gas plasma treating a workpiece in a process chamber having RF coil outside the chamber, a flat dielectric window, and a electrically conducting shield, adapted to be located between the RF coil and the dielectric window. The shield comprises a planar body section having a periphery, cen ...