1
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Method to deposit SiOCH films with dielectric constant below 3.0. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, January 22, 2002: US06340628 (92 worldwide citation)

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO


2
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Dielectric films with low dielectric constants. Beyer Weaver & Thomas, June 10, 2003: US06576345 (47 worldwide citation)

Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like ...


3
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Beyer Weaver & Thomas, December 12, 2006: US07148155 (255 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


4
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Weaver Austin Villeneuve & Sampson, September 7, 2010: US07790633 (102 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


5
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition. Novellus Systems, Beyer Weaver, November 20, 2007: US07297608 (56 worldwide citation)

A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. Th ...


6
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkins, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie, Wai Fan Yau, Brian G Lu, Timothy M Archer, Sasson Roger Somekh: Conformal nanolaminate dielectric deposition and etch bag gap fill process. Novellus Systems, Weaver Austin Villeneuve & Sampson, January 27, 2009: US07482247 (52 worldwide citation)

Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of ...


7
Dennis M Hausmann, Adrianne K Tipton, Patrick A Van Cleemput, Bunsen Nie, Francisco J Juarez, Teresa Pong: Properties of a silica thin film produced by a rapid vapor deposition (RVD) process. Novellus Systems, Beyer Weaver & Thomas, March 15, 2005: US06867152 (40 worldwide citation)

A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectr ...


8
Dennis M Hausmann, Jeff Tobin, George D Papasouliotis, Ron Rulkens, Raihan M Tarafdar, Adrianne K Tipton, Bunsen Nie: Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer. Novellus Systems, Beyer Weaver, April 10, 2007: US07202185 (28 worldwide citation)

An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes ...


9
Ron Rulkens, Dennis M Hausmann, Raihan M Tarafdar, George D Papasouliotis, Bunsen Nie, Adrianne K Tipton, Jeff Tobin: films, Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO. Novellus Systems, Beyer Weaver & Thomas, August 29, 2006: US07097878 (22 worldwide citation)

A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors wi ...


10
Dennis M Hausmann, Adrianne K Tipton, Bunsen Nie, George D Papasouliotis, Ron Rulkens, Raihan M Tarafdar: Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD). Novellus Systems, Beyer Weaver & Thomas, October 31, 2006: US07129189 (20 worldwide citation)

An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surfa ...